All MOSFET. IRF8513 Datasheet

 

IRF8513 Datasheet and Replacement


   Type Designator: IRF8513
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 1.5 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 30 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id| ⓘ - Maximum Drain Current: 8 A
   Tj ⓘ - Maximum Junction Temperature: 175 °C
   tr ⓘ - Rise Time: 8.5 nS
   Cossⓘ - Output Capacitance: 172 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.0155 Ohm
   Package: SO8
 

 IRF8513 substitution

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IRF8513 Datasheet (PDF)

 ..1. Size:336K  international rectifier
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IRF8513

PD - 96196IRF8513PbFHEXFET Power MOSFETApplicationsVDSS IDRDS(on) maxl Dual SO-8 MOSFET for POLConverters in Notebook Computers, Servers,Q1 15.5m @VGS = 10V 8.0A30VGraphics Cards, Game ConsolesQ2 12.7m @VGS = 10V 11Aand Set-Top BoxBenefitsl Low Gate Charge and Low RDS(on)l Fully Characterized Avalanche Voltageand Currentl 20V VGS Max. Gate Ratingl 100% Test

Datasheet: IRF7313 , IRF7752G , IRF7904 , IRF7303Q , IRFH7911 , IRFI4024H-117P , IRF6723M2D , IRFI4019H-117P , K3569 , IRF7101 , IRFI4019HG-117P , IRF7103 , IRLHS6276 , IRF7103Q , IRF7341Q , IRF7905 , IRF7907 .

History: EMF20B02V | R6035ENZ1 | IRF6729MPBF | IRF7704 | WMLL065N15HG2 | KI8810DS | KNB2710A

Keywords - IRF8513 MOSFET datasheet

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