IRF8915 Specs and Replacement
Type Designator: IRF8915
Type of Transistor: MOSFET
Type of Control Channel: N-Channel
Absolute Maximum Ratings
Pd ⓘ - Maximum Power Dissipation: 2 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 20 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Id| ⓘ - Maximum Drain Current: 8.9 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
Electrical Characteristics
tr ⓘ - Rise Time: 12 nS
Cossⓘ - Output Capacitance: 180 pF
RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.0183 Ohm
Package: SO8
IRF8915 substitution
- MOSFET ⓘ Cross-Reference Search
IRF8915 datasheet
irf8915.pdf
PD -95727A IRF8915PbF HEXFET Power MOSFET Applications VDSS RDS(on) max ID Dual SO-8 MOSFET for POL converters in desktop, servers, 18.3m @VGS = 10V 20V 8.9A graphics cards, game consoles and set-top box l Lead-Free 1 8 S1 D1 2 7 G1 D1 3 6 S2 D2 Benefits 4 5 G2 D2 l Ultra-Low Gate Impedance SO-8 l Very Low RDS(on) Top View l Fully Characterized Avalanche Voltage and ... See More ⇒
irf8910gpbf.pdf
PD -96257 IRF8910GPbF HEXFET Power MOSFET Applications VDSS RDS(on) max ID l Dual SO-8 MOSFET for POL converters in desktop, servers, 13.4m @VGS = 10V 20V 10A graphics cards, game consoles and set-top box l Lead-Free 1 l Halogen-Free 8 S1 D1 2 7 G1 D1 Benefits 3 6 S2 D2 l Very Low RDS(on) at 4.5V VGS 4 5 G2 D2 l Ultra-Low Gate Impedance SO-8 l Fully Characterized Ava... See More ⇒
irf8910pbf-1.pdf
IRF8910PbF-1 HEXFET Power MOSFET VDS 20 V 1 8 S1 D1 RDS(on) max 2 7 13.4 G1 D1 (@V = 10V) GS m 3 6 S2 D2 RDS(on) max 18.3 4 5 (@V = 4.5V) GS G2 D2 Qg (typical) 7.4 nC SO-8 Top View ID 10 A (@T = 25 C) A Features Benefits Industry-standard pinout SO-8 Package Multi-Vendor Compatibility Compatible with Existing Surface Mount Techniques Easier Manufacturin... See More ⇒
Detailed specifications: IRF7103Q, IRF7341Q, IRF7905, IRF7907, IRF8910, IRF7351, IRLHS6376, IRF7902, SKD502T, IRF7331, IRF7530, IRF8313, IRF8910G, IRF7303, IRF7313Q, IRF7910, IRF7380Q
Keywords - IRF8915 MOSFET specs
IRF8915 cross reference
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IRF8915 substitution
IRF8915 replacement
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