IRF8852 Datasheet. Specs and Replacement

Type Designator: IRF8852  📄📄 

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 1 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 25 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V

|Id| ⓘ - Maximum Drain Current: 7.8 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 10.9 nS

Cossⓘ - Output Capacitance: 295 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.0113 Ohm

Package: TSSOP8

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IRF8852 datasheet

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IRF8852

PD - 96246 IRF8852PbF HEXFET Power MOSFET l Ultra Low On-Resistance VDSS RDS(on) max l Dual N-Channel MOSFET Id l Very Small SOIC Package 11.3m @VGS = 10V 7.8A l Low Profile (... See More ⇒

Detailed specifications: IRF8313, IRF8910G, IRF7303, IRF7313Q, IRF7910, IRF7380Q, IRF7341, IRF7503, NCEP15T14, IRF7103I, IRF7304Q, IRF7756G, IRF7314Q, IRF7329, IRF7316Q, IRF7306, IRF7324

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