All MOSFET. IRF8852 Datasheet

 

IRF8852 Datasheet and Replacement


   Type Designator: IRF8852
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 1 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 25 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id| ⓘ - Maximum Drain Current: 7.8 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   tr ⓘ - Rise Time: 10.9 nS
   Cossⓘ - Output Capacitance: 295 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.0113 Ohm
   Package: TSSOP8
 

 IRF8852 substitution

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IRF8852 Datasheet (PDF)

 ..1. Size:296K  international rectifier
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IRF8852

PD - 96246IRF8852PbFHEXFET Power MOSFETl Ultra Low On-ResistanceVDSS RDS(on) maxl Dual N-Channel MOSFET Id l Very Small SOIC Package11.3m @VGS = 10V7.8Al Low Profile (

Datasheet: IRF8313 , IRF8910G , IRF7303 , IRF7313Q , IRF7910 , IRF7380Q , IRF7341 , IRF7503 , AON6380 , IRF7103I , IRF7304Q , IRF7756G , IRF7314Q , IRF7329 , IRF7316Q , IRF7306 , IRF7324 .

History: APQ13SN50A | IXZ308N120 | FQB19N20LTM | QM2604V

Keywords - IRF8852 MOSFET datasheet

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