HN1J02FU Specs and Replacement

Type Designator: HN1J02FU

Type of Transistor: MOSFET

Type of Control Channel: P-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 0.2 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 20 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 7 V

|Id| ⓘ - Maximum Drain Current: 0.05 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

Cossⓘ - Output Capacitance: 8.4 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 40 Ohm

Package: SOT363 SC88 US6

HN1J02FU substitution

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HN1J02FU datasheet

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HN1J02FU

HN1J02FU TOSHIBA Field Effect Transistor Silicon P Channel Mos Type HN1J02FU High Speed Switching Applications Unit in mm Analog Switch Applications High input impedance Low threshold voltage V =-0.5V -1.5V th High speed Small package Absolute Maximum Ratings (Ta = 25 C) (Q1, Q2 Common) Characteristic Symbol Rating Unit Drain-source voltage VDS -20 V Gate-sou... See More ⇒

Detailed specifications: 2SK4014, 2SK4017, 2SK4023, 2SK4026, 2SK4033, 2SK4034, 2SK4115, 2SK4207, IRFP460, HN1K02FU, HN1K03FU, HN1K04FU, HN1K05FU, HN1K06FU, HN1L02FU, HN1L03FU, HN4K03JU

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