All MOSFET. HN1J02FU Datasheet

 

HN1J02FU Datasheet and Replacement


   Type Designator: HN1J02FU
   Type of Transistor: MOSFET
   Type of Control Channel: P -Channel
   Pdⓘ - Maximum Power Dissipation: 0.2 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 20 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 7 V
   |Id|ⓘ - Maximum Drain Current: 0.05 A
   Tjⓘ - Maximum Junction Temperature: 150 °C
   Cossⓘ - Output Capacitance: 8.4 pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 40 Ohm
   Package: SOT363 SC88 US6
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HN1J02FU Datasheet (PDF)

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HN1J02FU

HN1J02FU TOSHIBA Field Effect Transistor Silicon P Channel Mos Type HN1J02FU High Speed Switching Applications Unit in mmAnalog Switch Applications High input impedance Low threshold voltage: V =-0.5V~-1.5V th High speed Small package Absolute Maximum Ratings (Ta = 25C) (Q1, Q2 Common) Characteristic Symbol Rating UnitDrain-source voltage VDS -20 VGate-sou

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