All MOSFET. HN1L02FU Datasheet

 

HN1L02FU Datasheet and Replacement


   Type Designator: HN1L02FU
   Marking Code: K2
   Type of Transistor: MOSFET
   Type of Control Channel: NP -Channel
   Pdⓘ - Maximum Power Dissipation: 0.2 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 20 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 10 V
   |Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 1.5 V
   |Id|ⓘ - Maximum Drain Current: 0.05 A
   Tjⓘ - Maximum Junction Temperature: 150 °C
   Cossⓘ - Output Capacitance: 6.5 pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 40 Ohm
   Package: SOT363 SC88 US6
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HN1L02FU Datasheet (PDF)

 ..1. Size:464K  toshiba
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HN1L02FU

HN1L02FU TOSHIBA Field Effect Transistor Silicon NP Channel MOS Type HN1L02FU Unit in mmHigh Speed Switching Applications Analog Switch Applications Q1, Q2 common 2.5V gate drive Low threshold voltage Q1: V = 0.5~1.5V Q2: V =-0.5~-1.5V th th High speed Small package Q1 Absolute Maximum Ratings (Ta = 25C) Characteristics Symbol Rating UnitDrain-Source vol

 9.1. Size:468K  toshiba
 hn1l03fu.pdf pdf_icon

HN1L02FU

HN1L03FU TOSHIBA Field Effect Transistor Silicon NP Channel MOS Type HN1L03FU Unit in mmHigh Speed Switching Applications Analog Switch Applications Q1, Q2 common Low threshold voltage Q1: V = 0.8~2.5V Q2: V =-0.5~-1.5V th th High speed Small package Q1 Absolute Maximum Ratings (Ta = 25C) Characteristics Symbol Rating UnitDrain-Source voltage VDS 50 VGate-

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History: HCD90R1K0 | STN3N45K3

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