HN1L02FU Specs and Replacement

Type Designator: HN1L02FU

Type of Transistor: MOSFET

Type of Control Channel: NP-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 0.2 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 20 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 10 V

|Id| ⓘ - Maximum Drain Current: 0.05 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

Cossⓘ - Output Capacitance: 6.5 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 40 Ohm

Package: SOT363 SC88 US6

HN1L02FU substitution

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HN1L02FU datasheet

 ..1. Size:464K  toshiba
 hn1l02fu.pdf pdf_icon

HN1L02FU

HN1L02FU TOSHIBA Field Effect Transistor Silicon N P Channel MOS Type HN1L02FU Unit in mm High Speed Switching Applications Analog Switch Applications Q1, Q2 common 2.5V gate drive Low threshold voltage Q1 V = 0.5 1.5V Q2 V =-0.5 -1.5V th th High speed Small package Q1 Absolute Maximum Ratings (Ta = 25 C) Characteristics Symbol Rating Unit Drain-Source vol... See More ⇒

 9.1. Size:468K  toshiba
 hn1l03fu.pdf pdf_icon

HN1L02FU

HN1L03FU TOSHIBA Field Effect Transistor Silicon N P Channel MOS Type HN1L03FU Unit in mm High Speed Switching Applications Analog Switch Applications Q1, Q2 common Low threshold voltage Q1 V = 0.8 2.5V Q2 V =-0.5 -1.5V th th High speed Small package Q1 Absolute Maximum Ratings (Ta = 25 C) Characteristics Symbol Rating Unit Drain-Source voltage VDS 50 V Gate-... See More ⇒

Detailed specifications: 2SK4115, 2SK4207, HN1J02FU, HN1K02FU, HN1K03FU, HN1K04FU, HN1K05FU, HN1K06FU, IRF640N, HN1L03FU, HN4K03JU, SSM3J01F, SSM3J01T, SSM3J02F, SSM3J02T, SSM3J05FU, SSM3J09FU

Keywords - HN1L02FU MOSFET specs

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