All MOSFET. HN4K03JU Datasheet

 

HN4K03JU Datasheet and Replacement


   Type Designator: HN4K03JU
   Marking Code: KP
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 0.2 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 20 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 10 V
   |Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 1.5 V
   |Id| ⓘ - Maximum Drain Current: 0.1 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   Cossⓘ - Output Capacitance: 9.3 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 12 Ohm
   Package: SOT353 SC88A USV
 

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HN4K03JU Datasheet (PDF)

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HN4K03JU

HN4K03JU TOSHIBA Field Effect Transistor Silicon N Channel MOS Type HN4K03JU Unit in mmHigh Speed Switching Applications Analog Switch Applications High input impedance Low gate threshold voltage: Vth = 0.5~1.5V Excellent switching times Small package Absolute Maximum Ratings (Ta = 25C) (Q1, Q2 Common) Characteristics Symbol Rating UnitDrain-Source voltage VDS

Datasheet: HN1J02FU , HN1K02FU , HN1K03FU , HN1K04FU , HN1K05FU , HN1K06FU , HN1L02FU , HN1L03FU , IRF3710 , SSM3J01F , SSM3J01T , SSM3J02F , SSM3J02T , SSM3J05FU , SSM3J09FU , SSM3J108TU , SSM3J109TU .

History: FX50KMJ-06

Keywords - HN4K03JU MOSFET datasheet

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