HN4K03JU Specs and Replacement
Type Designator: HN4K03JU
Type of Transistor: MOSFET
Type of Control Channel: N-Channel
Absolute Maximum Ratings
Pd ⓘ - Maximum Power Dissipation: 0.2 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 20 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 10 V
|Id| ⓘ - Maximum Drain Current: 0.1 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
Electrical Characteristics
Cossⓘ - Output Capacitance: 9.3 pF
RDSonⓘ - Maximum Drain-Source On-State Resistance: 12 Ohm
HN4K03JU substitution
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HN4K03JU datasheet
hn4k03ju.pdf
HN4K03JU TOSHIBA Field Effect Transistor Silicon N Channel MOS Type HN4K03JU Unit in mm High Speed Switching Applications Analog Switch Applications High input impedance Low gate threshold voltage Vth = 0.5 1.5V Excellent switching times Small package Absolute Maximum Ratings (Ta = 25 C) (Q1, Q2 Common) Characteristics Symbol Rating Unit Drain-Source voltage VDS... See More ⇒
Detailed specifications: HN1J02FU, HN1K02FU, HN1K03FU, HN1K04FU, HN1K05FU, HN1K06FU, HN1L02FU, HN1L03FU, AO3400, SSM3J01F, SSM3J01T, SSM3J02F, SSM3J02T, SSM3J05FU, SSM3J09FU, SSM3J108TU, SSM3J109TU
Keywords - HN4K03JU MOSFET specs
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