All MOSFET. HN4K03JU Datasheet

 

HN4K03JU Datasheet and Replacement


   Type Designator: HN4K03JU
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pdⓘ - Maximum Power Dissipation: 0.2 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 20 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 10 V
   |Id|ⓘ - Maximum Drain Current: 0.1 A
   Tjⓘ - Maximum Junction Temperature: 150 °C
   Cossⓘ - Output Capacitance: 9.3 pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 12 Ohm
   Package: SOT353 SC88A USV
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HN4K03JU Datasheet (PDF)

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HN4K03JU

HN4K03JU TOSHIBA Field Effect Transistor Silicon N Channel MOS Type HN4K03JU Unit in mmHigh Speed Switching Applications Analog Switch Applications High input impedance Low gate threshold voltage: Vth = 0.5~1.5V Excellent switching times Small package Absolute Maximum Ratings (Ta = 25C) (Q1, Q2 Common) Characteristics Symbol Rating UnitDrain-Source voltage VDS

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History: CHM85A3PAGP | SML100L16 | SQ9407EY-T1 | ALD1103DB | TK7P65W | SFFX054Z

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