All MOSFET. SSM4K27CT Datasheet

 

SSM4K27CT Datasheet and Replacement


   Type Designator: SSM4K27CT
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 0.4 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 20 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 12 V
   |Id| ⓘ - Maximum Drain Current: 0.5 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   Cossⓘ - Output Capacitance: 31 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.205 Ohm
   Package: CST4
 

 SSM4K27CT substitution

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SSM4K27CT Datasheet (PDF)

 ..1. Size:256K  toshiba
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SSM4K27CT

SSM4K27CT TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (U-MOS) SSM4K27CT Switching Applications Unit: mmTop view 0.80.05 Suitable for high-density mounting due to compact package 0.5 0.050.04 0.20.02 Low on-resistance: Ron = 205 m (max) (@VGS = 4.0 V) Ron = 260 m (max) (@VGS = 2.5 V) Ron = 390 m (max) (@VGS = 1.8 V) Maximum

Datasheet: SSM3K44MFV , SSM3K48FU , SSM3K7002AFU , SSM3K7002BFS , SSM3K7002BFU , SSM3K7002BF , SSM3K7002FU , SSM3K7002F , TK10A60D , SSM5N05FU , SSM5N15FE , SSM5N15FU , SSM5N16FE , SSM5N16FU , SSM5P05FU , SSM5P15FU , SSM5P16FE .

History: IRFAF50

Keywords - SSM4K27CT MOSFET datasheet

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