All MOSFET. SSM4K27CT Datasheet

 

SSM4K27CT Datasheet and Replacement


   Type Designator: SSM4K27CT
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pdⓘ - Maximum Power Dissipation: 0.4 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 20 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 12 V
   |Id|ⓘ - Maximum Drain Current: 0.5 A
   Tjⓘ - Maximum Junction Temperature: 150 °C
   Cossⓘ - Output Capacitance: 31 pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.205 Ohm
   Package: CST4
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SSM4K27CT Datasheet (PDF)

 ..1. Size:256K  toshiba
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SSM4K27CT

SSM4K27CT TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (U-MOS) SSM4K27CT Switching Applications Unit: mmTop view 0.80.05 Suitable for high-density mounting due to compact package 0.5 0.050.04 0.20.02 Low on-resistance: Ron = 205 m (max) (@VGS = 4.0 V) Ron = 260 m (max) (@VGS = 2.5 V) Ron = 390 m (max) (@VGS = 1.8 V) Maximum

Datasheet: FMP36-015P , FMP76-01T , GMM3x100-01X1-SMD , FDMS0306AS , GMM3x120-0075X2-SMD , FDMS0300S , GMM3x160-0055X2-SMD , FDMC7200S , CS150N03A8 , FDMC7200 , GMM3x60-015X2-SMD , FDMC0310AS , GWM100-0085X1-SL , FDMS3610S , GWM100-0085X1-SMD , FDMS3606S , GWM100-01X1-SL .

History: IPB22N03S4L-15 | LSC65R280HT | 2SK3700

Keywords - SSM4K27CT MOSFET datasheet

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