SSM4K27CT Specs and Replacement

Type Designator: SSM4K27CT

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 0.4 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 20 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 12 V

|Id| ⓘ - Maximum Drain Current: 0.5 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

Cossⓘ - Output Capacitance: 31 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.205 Ohm

Package: CST4

SSM4K27CT substitution

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SSM4K27CT datasheet

 ..1. Size:256K  toshiba
 ssm4k27ct.pdf pdf_icon

SSM4K27CT

SSM4K27CT TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (U-MOS ) SSM4K27CT Switching Applications Unit mm Top view 0.8 0.05 Suitable for high-density mounting due to compact package 0.5 0.05 0.04 0.2 0.02 Low on-resistance Ron = 205 m (max) (@VGS = 4.0 V) Ron = 260 m (max) (@VGS = 2.5 V) Ron = 390 m (max) (@VGS = 1.8 V) Maximum... See More ⇒

Detailed specifications: SSM3K44MFV, SSM3K48FU, SSM3K7002AFU, SSM3K7002BFS, SSM3K7002BFU, SSM3K7002BF, SSM3K7002FU, SSM3K7002F, 13N50, SSM5N05FU, SSM5N15FE, SSM5N15FU, SSM5N16FE, SSM5N16FU, SSM5P05FU, SSM5P15FU, SSM5P16FE

Keywords - SSM4K27CT MOSFET specs

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Step-by-step guide to finding a MOSFET replacement. Cross-reference parts and ensure compatibility for your repair or project.