All MOSFET. SSM6L39TU Datasheet

 

SSM6L39TU MOSFET. Datasheet pdf. Equivalent


   Type Designator: SSM6L39TU
   Marking Code: LL1
   Type of Transistor: MOSFET
   Type of Control Channel: NP -Channel
   Pdⓘ - Maximum Power Dissipation: 0.5 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 20 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 10 V
   |Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 1 V
   |Id|ⓘ - Maximum Drain Current: 1.6 A
   Tjⓘ - Maximum Junction Temperature: 150 °C
   Qgⓘ - Total Gate Charge: 7.5 nC
   Cossⓘ - Output Capacitance: 45 pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.119 Ohm
   Package: UF6

 SSM6L39TU Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

SSM6L39TU Datasheet (PDF)

 ..1. Size:244K  toshiba
ssm6l39tu.pdf

SSM6L39TU SSM6L39TU

SSM6L39TU TOSHIBA Field-Effect Transistor Silicon N / P Channel MOS Type SSM6L39TU Power Management Switch Applications High-Speed Switching Applications Unit: mm2.10.1 N-ch: 1.5-V drive 1.70.1P-ch: 1.8-V drive N-ch, P-ch, 2-in-1 1 6 Low ON-resistance Q1 N-ch: Ron = 247 m (max) (@VGS = 1.5 V) Ron = 190 m (max) (@VGS = 1.8 V) 2 5Ron = 139 m

 8.1. Size:232K  toshiba
ssm6l36tu.pdf

SSM6L39TU SSM6L39TU

SSM6L36TU TOSHIBA Field-Effect Transistor Silicon N / P Channel MOS Type SSM6L36TU Unit: mm High-Speed Switching Applications 2.10.1 1.70.1 1.5-V drive Low ON-resistance Q1 N-ch: Ron = 1.52 (max) (@VGS = 1.5 V) 1 6 Ron = 1.14 (max) (@VGS = 1.8 V) 2 5 Ron = 0.85 (max) (@VGS = 2.5 V) 3 4Ron = 0.66 (max) (@VGS = 4.5 V) Ron = 0.63 (max) (@VGS =

 8.2. Size:222K  toshiba
ssm6l36fe.pdf

SSM6L39TU SSM6L39TU

SSM6L36FE TOSHIBA Field-Effect Transistor Silicon N / P Channel MOS Type SSM6L36FE High-Speed Switching Applications Unit: mm1.60.05 1.5-V drive1.20.05 Low ON-resistance Q1 Nch: Ron = 1.52 (max) (@VGS = 1.5 V) Ron = 1.14 (max) (@VGS = 1.8 V) Ron = 0.85 (max) (@VGS = 2.5 V) 1 6Ron = 0.66 (max) (@VGS = 4.5 V) Ron = 0.63 (max) (@VGS = 5.0 V) 2

 8.3. Size:218K  toshiba
ssm6l35fe.pdf

SSM6L39TU SSM6L39TU

SSM6L35FE TOSHIBA Field-Effect Transistor Silicon N / P Channel MOS Type SSM6L35FE High-Speed Switching Applications Unit: mm Analog Switch Applications 1.60.051.20.05 N-ch: 1.2-V drive P-ch: 1.2-V drive N-ch, P-ch, 2-in-1 1 6 Low ON-resistance Q1 N-ch: Ron = 20 (max) (@VGS = 1.2 V) 25: Ron = 8 (max) (@VGS = 1.5 V) : Ron = 4 (max) (

 8.4. Size:224K  toshiba
ssm6l35fu.pdf

SSM6L39TU SSM6L39TU

SSM6L35FU TOSHIBA Field-Effect Transistor Silicon N / P Channel MOS Type SSM6L35FU High-Speed Switching Applications Unit: mm Analog Switch Applications N-ch: 1.2-V drive P-ch: 1.2-V drive N-ch, P-ch, 2-in-1 Low ON-resistance Q1 N-ch: Ron = 20 (max) (@VGS = 1.2 V) : Ron = 8 (max) (@VGS = 1.5 V) : Ron = 4 (max) (@VGS = 2.5 V) : Ron = 3

Datasheet: FMP36-015P , FMP76-01T , GMM3x100-01X1-SMD , FDMS0306AS , GMM3x120-0075X2-SMD , FDMS0300S , GMM3x160-0055X2-SMD , FDMC7200S , RFP50N06 , FDMC7200 , GMM3x60-015X2-SMD , FDMC0310AS , GWM100-0085X1-SL , FDMS3610S , GWM100-0085X1-SMD , FDMS3606S , GWM100-01X1-SL .

 

 
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