TJ10S04M3L Specs and Replacement

Type Designator: TJ10S04M3L

Type of Transistor: MOSFET

Type of Control Channel: P-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 27 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 40 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 10 V

|Id| ⓘ - Maximum Drain Current: 10 A

Tj ⓘ - Maximum Junction Temperature: 175 °C

Electrical Characteristics

tr ⓘ - Rise Time: 7 nS

Cossⓘ - Output Capacitance: 140 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.062 Ohm

Package: DPAK

TJ10S04M3L substitution

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TJ10S04M3L datasheet

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TJ10S04M3L

TJ10S04M3L MOSFETs Silicon P-Channel MOS (U-MOS ) TJ10S04M3L TJ10S04M3L TJ10S04M3L TJ10S04M3L 1. Applications 1. Applications 1. Applications 1. Applications Motor Drivers DC-DC Converters Switching Voltage Regulators 2. Features 2. Features 2. Features 2. Features (1) Low drain-source on-resistance RDS(ON) = 33.8 m (typ.) (VGS = -10 V) (2) Low leakage curren... See More ⇒

Detailed specifications: SSM6P36FE, SSM6P36TU, SSM6P39TU, SSM6P40TU, SSM6P41FE, SSM6P47NU, SSM6P49NU, SSM6P54TU, 10N65, TJ11A10M3, TJ150F06M3L, TJ15P04M3, TJ15S06M3L, TJ20A10M3, TJ20S04M3L, TJ30S06M3L, TJ40S04M3L

Keywords - TJ10S04M3L MOSFET specs

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