All MOSFET. TJ10S04M3L Datasheet

 

TJ10S04M3L Datasheet and Replacement


   Type Designator: TJ10S04M3L
   Marking Code: J10S04M3
   Type of Transistor: MOSFET
   Type of Control Channel: P -Channel
   Pdⓘ - Maximum Power Dissipation: 27 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 40 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 10 V
   |Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 3 V
   |Id|ⓘ - Maximum Drain Current: 10 A
   Tjⓘ - Maximum Junction Temperature: 175 °C
   Qgⓘ - Total Gate Charge: 19 nC
   trⓘ - Rise Time: 7 nS
   Cossⓘ - Output Capacitance: 140 pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.062 Ohm
   Package: DPAK
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TJ10S04M3L Datasheet (PDF)

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TJ10S04M3L

TJ10S04M3LMOSFETs Silicon P-Channel MOS (U-MOS)TJ10S04M3LTJ10S04M3LTJ10S04M3LTJ10S04M3L1. Applications1. Applications1. Applications1. Applications Motor Drivers DC-DC Converters Switching Voltage Regulators2. Features2. Features2. Features2. Features(1) Low drain-source on-resistance: RDS(ON) = 33.8 m (typ.) (VGS = -10 V)(2) Low leakage curren

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