All MOSFET. TJ11A10M3 Datasheet

 

TJ11A10M3 Datasheet and Replacement


   Type Designator: TJ11A10M3
   Type of Transistor: MOSFET
   Type of Control Channel: P -Channel
   Pd ⓘ - Maximum Power Dissipation: 24 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 100 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id| ⓘ - Maximum Drain Current: 11 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   tr ⓘ - Rise Time: 12 nS
   Cossⓘ - Output Capacitance: 190 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.13 Ohm
   Package: TO220SIS
 

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TJ11A10M3 Datasheet (PDF)

 ..1. Size:260K  toshiba
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TJ11A10M3

TJ11A10M3MOSFETs Silicon P-Channel MOS (U-MOS)TJ11A10M3TJ11A10M3TJ11A10M3TJ11A10M31. Applications1. Applications1. Applications1. Applications Switching Voltage Regulators2. Features2. Features2. Features2. Features(1) Low drain-source on-resistance: RDS(ON) = 100 m (typ.) (VGS = -10 V)(2) Low leakage current: IDSS = -10 A (max) (VDS = -100 V)(3) Enh

 ..2. Size:242K  inchange semiconductor
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TJ11A10M3

INCHANGE Semiconductorisc N-Channel MOSFET Transistor TJ11A10M3ITJ11A10M3FEATURESLow drain-source on-resistance:RDS(on) 130m.(VGS = -10 V)Enhancement mode:Vth = -2.0 to -4.0V (VDS = -10 V, ID=-1mA)100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRITIONSwitching Voltage RegulatorsABSOLUTE MA

Datasheet: SSM6P36TU , SSM6P39TU , SSM6P40TU , SSM6P41FE , SSM6P47NU , SSM6P49NU , SSM6P54TU , TJ10S04M3L , 13N50 , TJ150F06M3L , TJ15P04M3 , TJ15S06M3L , TJ20A10M3 , TJ20S04M3L , TJ30S06M3L , TJ40S04M3L , TJ50S06M3L .

History: IPD60R520C6 | HY5208W | UPA1916 | RFD8P06ESM | STD55N4F5 | STFI11N65M2 | TK3P80E

Keywords - TJ11A10M3 MOSFET datasheet

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