TJ11A10M3 Specs and Replacement

Type Designator: TJ11A10M3

Type of Transistor: MOSFET

Type of Control Channel: P-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 24 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 100 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V

|Id| ⓘ - Maximum Drain Current: 11 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 12 nS

Cossⓘ - Output Capacitance: 190 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.13 Ohm

Package: TO220SIS

TJ11A10M3 substitution

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TJ11A10M3 datasheet

 ..1. Size:260K  toshiba
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TJ11A10M3

TJ11A10M3 MOSFETs Silicon P-Channel MOS (U-MOS ) TJ11A10M3 TJ11A10M3 TJ11A10M3 TJ11A10M3 1. Applications 1. Applications 1. Applications 1. Applications Switching Voltage Regulators 2. Features 2. Features 2. Features 2. Features (1) Low drain-source on-resistance RDS(ON) = 100 m (typ.) (VGS = -10 V) (2) Low leakage current IDSS = -10 A (max) (VDS = -100 V) (3) Enh... See More ⇒

 ..2. Size:242K  inchange semiconductor
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TJ11A10M3

INCHANGE Semiconductor isc N-Channel MOSFET Transistor TJ11A10M3 ITJ11A10M3 FEATURES Low drain-source on-resistance RDS(on) 130m .(VGS = -10 V) Enhancement mode Vth = -2.0 to -4.0V (VDS = -10 V, ID=-1mA) 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRITION Switching Voltage Regulators ABSOLUTE MA... See More ⇒

Detailed specifications: SSM6P36TU, SSM6P39TU, SSM6P40TU, SSM6P41FE, SSM6P47NU, SSM6P49NU, SSM6P54TU, TJ10S04M3L, 5N60, TJ150F06M3L, TJ15P04M3, TJ15S06M3L, TJ20A10M3, TJ20S04M3L, TJ30S06M3L, TJ40S04M3L, TJ50S06M3L

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Learn how to find the right MOSFET substitute. A guide to cross-reference, check specs and replace MOSFETs in your circuits.