All MOSFET. TJ11A10M3 Datasheet

 

TJ11A10M3 MOSFET. Datasheet pdf. Equivalent


   Type Designator: TJ11A10M3
   Marking Code: J11A10M3
   Type of Transistor: MOSFET
   Type of Control Channel: P -Channel
   Pdⓘ - Maximum Power Dissipation: 24 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 100 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 4 V
   |Id|ⓘ - Maximum Drain Current: 11 A
   Tjⓘ - Maximum Junction Temperature: 150 °C
   Qgⓘ - Total Gate Charge: 69 nC
   trⓘ - Rise Time: 12 nS
   Cossⓘ - Output Capacitance: 190 pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.13 Ohm
   Package: TO220SIS

 TJ11A10M3 Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

TJ11A10M3 Datasheet (PDF)

 ..1. Size:260K  toshiba
 tj11a10m3.pdf

TJ11A10M3 TJ11A10M3

TJ11A10M3MOSFETs Silicon P-Channel MOS (U-MOS)TJ11A10M3TJ11A10M3TJ11A10M3TJ11A10M31. Applications1. Applications1. Applications1. Applications Switching Voltage Regulators2. Features2. Features2. Features2. Features(1) Low drain-source on-resistance: RDS(ON) = 100 m (typ.) (VGS = -10 V)(2) Low leakage current: IDSS = -10 A (max) (VDS = -100 V)(3) Enh

 ..2. Size:242K  inchange semiconductor
 tj11a10m3.pdf

TJ11A10M3 TJ11A10M3

INCHANGE Semiconductorisc N-Channel MOSFET Transistor TJ11A10M3ITJ11A10M3FEATURESLow drain-source on-resistance:RDS(on) 130m.(VGS = -10 V)Enhancement mode:Vth = -2.0 to -4.0V (VDS = -10 V, ID=-1mA)100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRITIONSwitching Voltage RegulatorsABSOLUTE MA

Datasheet: WPB4002 , FDM15-06KC5 , FQD2N60CTM , FDM47-06KC5 , FDPF045N10A , FMD15-06KC5 , FDMS8672S , FMD21-05QC , IRFP250N , FDMS86368F085 , FMD47-06KC5 , FDBL86361F085 , FMK75-01F , FMM110-015X2F , FMM150-0075X2F , FMM22-05PF , FMM22-06PF .

History: FQPF20N06L

 

 
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