TJ15P04M3 Datasheet and Replacement
Type Designator: TJ15P04M3
Marking Code: J15P04M
Type of Transistor: MOSFET
Type of Control Channel: P -Channel
Pd ⓘ - Maximum Power Dissipation: 29 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 40 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 2 V
|Id| ⓘ - Maximum Drain Current: 15 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
Qg ⓘ - Total Gate Charge: 26 nC
tr ⓘ - Rise Time: 11 nS
Cossⓘ - Output Capacitance: 170 pF
Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.048 Ohm
Package: DPAK
TJ15P04M3 substitution
TJ15P04M3 Datasheet (PDF)
..1. Size:242K toshiba
tj15p04m3.pdf
tj15p04m3.pdf
TJ15P04M3MOSFETs Silicon P-Channel MOS (U-MOS)TJ15P04M3TJ15P04M3TJ15P04M3TJ15P04M31. Applications1. Applications1. Applications1. Applications DC-DC Converters Desktop Computers2. Features2. Features2. Features2. Features(1) Low drain-source on-resistance: RDS(ON) = 28 m (typ.) (VGS = -10 V)(2) Low leakage current: IDSS = -10 A (max) (VDS = -40 V)
Datasheet: IRFP344 , IRFP350 , IRFP350A , IRFP350FI , IRFP350LC , IRFP351 , IRFP352 , IRFP353 , 2SK3568 , IRFP360 , IRFP360LC , IRFP3710 , IRFP430 , IRFP431 , IRFP432 , IRFP433 , IRFP440 .
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