All MOSFET. TJ20A10M3 Datasheet

 

TJ20A10M3 Datasheet and Replacement


   Type Designator: TJ20A10M3
   Type of Transistor: MOSFET
   Type of Control Channel: P -Channel
   Pd ⓘ - Maximum Power Dissipation: 35 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 100 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id| ⓘ - Maximum Drain Current: 20 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   tr ⓘ - Rise Time: 13 nS
   Cossⓘ - Output Capacitance: 290 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.09 Ohm
   Package: TO220SIS
 

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TJ20A10M3 Datasheet (PDF)

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TJ20A10M3

TJ20A10M3 TOSHIBA Field Effect Transistor Silicon P Channel MOS Type (U-MOSVI) TJ20A10M3 Swiching Regulator Applications Low drain-source ON resistance: RDS (ON) = 63 m (typ.) Unit: mm High forward transfer admittance: |Yfs| = 50 S (typ.) Low leakage current: IDSS = -10 A (max) (VDS = -100 V) Enhancement-model: Vth = -2.0 to -4.0 V (VDS = -10 V, ID = -1 mA)

Datasheet: SSM6P47NU , SSM6P49NU , SSM6P54TU , TJ10S04M3L , TJ11A10M3 , TJ150F06M3L , TJ15P04M3 , TJ15S06M3L , 75N75 , TJ20S04M3L , TJ30S06M3L , TJ40S04M3L , TJ50S06M3L , TJ60S04M3L , TJ60S06M3L , TJ70A06J3 , TJ80S04M3L .

History: SI4320DY | NDB5060L | 2SK360

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