TJ20A10M3 MOSFET Datasheet: P-Ch, 100V, 20A. Full specification with pinout and replacement list

TJ20A10M3 Specs and Replacement

   Type Designator: TJ20A10M3
   Type of Transistor: MOSFET
   Type of Control Channel: P -Channel

Absolute Maximum Ratings

   Pd ⓘ - Maximum Power Dissipation: 35 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 100 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id| ⓘ - Maximum Drain Current: 20 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

   tr ⓘ - Rise Time: 13 nS
   Cossⓘ - Output Capacitance: 290 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.09 Ohm
   Package: TO220SIS

TJ20A10M3 substitution

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TJ20A10M3 datasheet

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TJ20A10M3 TOSHIBA Field Effect Transistor Silicon P Channel MOS Type (U-MOSVI) TJ20A10M3 Swiching Regulator Applications Low drain-source ON resistance RDS (ON) = 63 m (typ.) Unit mm High forward transfer admittance Yfs = 50 S (typ.) Low leakage current IDSS = -10 A (max) (VDS = -100 V) Enhancement-model Vth = -2.0 to -4.0 V (VDS = -10 V, ID = -1 mA) ... See More ⇒

Detailed specifications: SSM6P47NU , SSM6P49NU , SSM6P54TU , TJ10S04M3L , TJ11A10M3 , TJ150F06M3L , TJ15P04M3 , TJ15S06M3L , 18N50 , TJ20S04M3L , TJ30S06M3L , TJ40S04M3L , TJ50S06M3L , TJ60S04M3L , TJ60S06M3L , TJ70A06J3 , TJ80S04M3L .