All MOSFET. TJ40S04M3L Datasheet

 

TJ40S04M3L MOSFET. Datasheet pdf. Equivalent


   Type Designator: TJ40S04M3L
   Marking Code: J40S04M3
   Type of Transistor: MOSFET
   Type of Control Channel: P -Channel
   Pdⓘ - Maximum Power Dissipation: 68 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 40 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 10 V
   |Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 3 V
   |Id|ⓘ - Maximum Drain Current: 40 A
   Tjⓘ - Maximum Junction Temperature: 175 °C
   Qgⓘ - Total Gate Charge: 83 nC
   trⓘ - Rise Time: 46 nS
   Cossⓘ - Output Capacitance: 510 pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.0091 Ohm
   Package: DPAK

 TJ40S04M3L Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

TJ40S04M3L Datasheet (PDF)

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 tj40s04m3l.pdf

TJ40S04M3L TJ40S04M3L

TJ40S04M3LMOSFETs Silicon P-Channel MOS (U-MOS)TJ40S04M3LTJ40S04M3LTJ40S04M3LTJ40S04M3L1. Applications1. Applications1. Applications1. Applications Motor Drivers DC-DC Converters Switching Voltage Regulators2. Features2. Features2. Features2. Features(1) Low drain-source on-resistance: RDS(ON) = 7.0 m (typ.) (VGS = -10 V)(2) Low leakage current

Datasheet: FMP36-015P , FMP76-01T , GMM3x100-01X1-SMD , FDMS0306AS , GMM3x120-0075X2-SMD , FDMS0300S , GMM3x160-0055X2-SMD , FDMC7200S , IRFB3607 , FDMC7200 , GMM3x60-015X2-SMD , FDMC0310AS , GWM100-0085X1-SL , FDMS3610S , GWM100-0085X1-SMD , FDMS3606S , GWM100-01X1-SL .

History: PD1503BV

 

 
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