All MOSFET. TJ60S06M3L Datasheet

 

TJ60S06M3L Datasheet and Replacement


   Type Designator: TJ60S06M3L
   Marking Code: J60S06M3
   Type of Transistor: MOSFET
   Type of Control Channel: P -Channel
   Pd ⓘ - Maximum Power Dissipation: 100 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 60 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 10 V
   |Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 3 V
   |Id| ⓘ - Maximum Drain Current: 60 A
   Tj ⓘ - Maximum Junction Temperature: 175 °C
   Qg ⓘ - Total Gate Charge: 156 nC
   tr ⓘ - Rise Time: 100 nS
   Cossⓘ - Output Capacitance: 690 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.0112 Ohm
   Package: DPAK
 

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TJ60S06M3L Datasheet (PDF)

 ..1. Size:240K  toshiba
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TJ60S06M3L

TJ60S06M3LMOSFETs Silicon P-Channel MOS (U-MOS)TJ60S06M3LTJ60S06M3LTJ60S06M3LTJ60S06M3L1. Applications1. Applications1. Applications1. Applications Motor Drivers DC-DC Converters Switching Voltage Regulators2. Features2. Features2. Features2. Features(1) Low drain-source on-resistance: RDS(ON) = 8.6 m (typ.) (VGS = -10 V)(2) Low leakage current

 8.1. Size:241K  toshiba
 tj60s04m3l.pdf pdf_icon

TJ60S06M3L

TJ60S04M3LMOSFETs Silicon P-Channel MOS (U-MOS)TJ60S04M3LTJ60S04M3LTJ60S04M3LTJ60S04M3L1. Applications1. Applications1. Applications1. Applications Motor Drivers DC-DC Converters Switching Voltage Regulators2. Features2. Features2. Features2. Features(1) Low drain-source on-resistance: RDS(ON) = 4.8 m (typ.) (VGS = -10 V)(2) Low leakage current

Datasheet: IRFP360LC , IRFP3710 , IRFP430 , IRFP431 , IRFP432 , IRFP433 , IRFP440 , IRFP440A , IRFP250 , IRFP442 , IRFP443 , IRFP448 , IRFP450 , IRFP450A , IRFP450FI , IRFP450LC , IRFP451 .

History: FSS9230D | STF20NF20

Keywords - TJ60S06M3L MOSFET datasheet

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