All MOSFET. TK12X60U Datasheet

 

TK12X60U Datasheet and Replacement


   Type Designator: TK12X60U
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 100 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 600 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
   |Id| ⓘ - Maximum Drain Current: 12 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   tr ⓘ - Rise Time: 30 nS
   Cossⓘ - Output Capacitance: 1700 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.42 Ohm
   Package: SC97 TFP
 

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TK12X60U Datasheet (PDF)

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TK12X60U

TK12X60U TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (DTMOS II) TK12X60U Switching Regulator Applications Unit: mm Low drain-source ON resistance: RDS (ON) = 0.38 (typ.) High forward transfer admittance: Yfs = 7.0 S (typ.) Low leakage current: IDSS = 100 A (max) (VDS = 600 V) Enhancement-mode: Vth = 3.0 to 5.0 V (VDS = 10 V, ID = 1 mA)

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TK12X60U

TK12X53D TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (-MOS) TK12X53D Switching Regulator Applications Unit: mm9.2 MAX. 7.0 0.2 0.4 0.1 Low drain-source ON resistance: RDS (ON) = 0.5 (typ.) 4 High forward transfer admittance: Yfs = 6.0 S (typ.) Low leakage current: IDSS = 10 A (max) (VDS = 525 V) Enhancement-mode: Vth =

Datasheet: TK12A55D , TK12A60D , TK12A60U , TK12A65D , TK12E60U , TK12J55D , TK12J60U , TK12X53D , IRF740 , TK130F06K3 , TK13A25D , TK13A45D , TK13A50DA , TK13A50D , TK13A55DA , TK13A60D , TK13A65D .

History: ME7632 | RSR020N06 | AON4407 | HFD1N60S | CEP10N65 | QM12N65F | NCE60NF055D

Keywords - TK12X60U MOSFET datasheet

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