TK12X60U Specs and Replacement
Type Designator: TK12X60U
Type of Transistor: MOSFET
Type of Control Channel: N-Channel
Absolute Maximum Ratings
Pd ⓘ - Maximum Power Dissipation: 100 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 600 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
|Id| ⓘ - Maximum Drain Current: 12 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
Electrical Characteristics
tr ⓘ - Rise Time: 30 nS
Cossⓘ - Output Capacitance: 1700 pF
RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.42 Ohm
TK12X60U substitution
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TK12X60U datasheet
tk12x60u.pdf
TK12X60U TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (DTMOS II) TK12X60U Switching Regulator Applications Unit mm Low drain-source ON resistance RDS (ON) = 0.38 (typ.) High forward transfer admittance Yfs = 7.0 S (typ.) Low leakage current IDSS = 100 A (max) (VDS = 600 V) Enhancement-mode Vth = 3.0 to 5.0 V (VDS = 10 V, ID = 1 mA) ... See More ⇒
tk12x53d.pdf
TK12X53D TOSHIBA Field Effect Transistor Silicon N Channel MOS Type ( -MOS ) TK12X53D Switching Regulator Applications Unit mm 9.2 MAX. 7.0 0.2 0.4 0.1 Low drain-source ON resistance RDS (ON) = 0.5 (typ.) 4 High forward transfer admittance Yfs = 6.0 S (typ.) Low leakage current IDSS = 10 A (max) (VDS = 525 V) Enhancement-mode Vth =... See More ⇒
Detailed specifications: TK12A55D, TK12A60D, TK12A60U, TK12A65D, TK12E60U, TK12J55D, TK12J60U, TK12X53D, IRF740, TK130F06K3, TK13A25D, TK13A45D, TK13A50DA, TK13A50D, TK13A55DA, TK13A60D, TK13A65D
Keywords - TK12X60U MOSFET specs
TK12X60U cross reference
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