All MOSFET. TK15E60U Datasheet

 

TK15E60U Datasheet and Replacement


   Type Designator: TK15E60U
   Marking Code: K15E60U
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 170 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 600 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
   |Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 5 V
   |Id| ⓘ - Maximum Drain Current: 15 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   Qg ⓘ - Total Gate Charge: 17 nC
   tr ⓘ - Rise Time: 37 nS
   Cossⓘ - Output Capacitance: 2300 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.3 Ohm
   Package: TO220
 
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TK15E60U Datasheet (PDF)

 ..1. Size:244K  toshiba
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TK15E60U

TK15E60UMOSFETs Silicon N-Channel MOS (DTMOS)TK15E60UTK15E60UTK15E60UTK15E60U1. Applications1. Applications1. Applications1. Applications Switching Voltage Regulators2. Features2. Features2. Features2. Features(1) Low drain-source on-resistance: RDS(ON) = 0.24 (typ.)(2) High forward transfer admittance: |Yfs| = 8.5 S (typ.)(3) Low leakage current: IDS

 ..2. Size:245K  inchange semiconductor
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TK15E60U

INCHANGE Semiconductorisc N-Channel MOSFET Transistor TK15E60UITK15E60UFEATURESLow drain-source on-resistance:RDS(on) 0.3.Enhancement mode:Vth =3.0 to 5.0V (VDS = 10 V, ID=1mA)100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRITIONSwitching Voltage RegulatorsABSOLUTE MAXIMUM RATINGS(T =25

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