TK15J50D Datasheet and Replacement
Type Designator: TK15J50D
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pd ⓘ - Maximum Power Dissipation: 210 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 500 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
|Id| ⓘ - Maximum Drain Current: 15 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
tr ⓘ - Rise Time: 40 nS
Cossⓘ - Output Capacitance: 190 pF
Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.4 Ohm
Package: SC65 TO3P
TK15J50D substitution
TK15J50D Datasheet (PDF)
tk15j50d.pdf

TK15J50D TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (-MOS) TK15J50D Switching Regulator Applications Unit: mm15.9 MAX. 3.2 0.2 Low drain-source ON resistance: RDS (ON) = 0.33 (typ.) High forward transfer admittance: Yfs = 8.0 S (typ.) Low leakage current: IDSS = 10 A (max) (VDS = 500 V) Enhancement-mode: Vth = 2.0 to 4.0 V
tk15j60u.pdf

TK15J60U TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (DTMOS II) TK15J60U Switching Regulator Applications Unit: mm15.9 MAX. 3.2 0.2 Low drain-source ON-resistance: RDS (ON) = 0.24 (typ.) High forward transfer admittance: Yfs = 8.5 S (typ.) Low leakage current: IDSS = 100 A (max) (VDS = 600 V) Enhancement-mode: Vth = 3.0 to 5.0 V
Datasheet: TK14A45D , TK14A55D , TK150F04K3 , TK15A20D , TK15A50D , TK15A60D , TK15A60U , TK15E60U , 2SK3878 , TK15J60U , TK15X60U , TK16A45D , TK16A55D , TK16J55D , TK17A65U , TK17J65U , TK18A30D .
History: IRFU18N15D | AM2394NE | APT6029BLL | APT38N60BC6 | BUK9Y11-80E | CEU06N7 | VBM1101M
Keywords - TK15J50D MOSFET datasheet
TK15J50D cross reference
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History: IRFU18N15D | AM2394NE | APT6029BLL | APT38N60BC6 | BUK9Y11-80E | CEU06N7 | VBM1101M



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