TK17A65U MOSFET Datasheet: N-Ch, 650V, 17A. Full specification with pinout and replacement list

TK17A65U Specs and Replacement

   Type Designator: TK17A65U
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel

Absolute Maximum Ratings

   Pd ⓘ - Maximum Power Dissipation: 45 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 650 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
   |Id| ⓘ - Maximum Drain Current: 17 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

   tr ⓘ - Rise Time: 40 nS
   Cossⓘ - Output Capacitance: 70 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.26 Ohm
   Package: TO220SIS

TK17A65U substitution

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TK17A65U datasheet

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TK17A65U MOSFETs Silicon N-Channel MOS (DTMOS ) TK17A65U TK17A65U TK17A65U TK17A65U 1. Applications 1. Applications 1. Applications 1. Applications Switching Voltage Regulators 2. Features 2. Features 2. Features 2. Features (1) Low drain-source on-resistance RDS(ON) = 0.20 (typ.) (2) High forward transfer admittance Yfs = 12.0 S (typ.) (3) Low leakage current ID... See More ⇒

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INCHANGE Semiconductor iscN-Channel MOSFET Transistor TK17A65U ITK17A65U FEATURES Low drain-source on-resistance RDS(ON) = 0.20 (typ.) Low leakage current IDSS = 100 A (max) (VDS = 650 V) Enhancement mode Vth = 3.0 to 5.0V (VDS = 10 V, ID=1mA) 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRITION S... See More ⇒

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TK17A65W5 MOSFETs Silicon N-Channel MOS (DTMOS ) TK17A65W5 TK17A65W5 TK17A65W5 TK17A65W5 1. Applications 1. Applications 1. Applications 1. Applications Switching Voltage Regulators 2. Features 2. Features 2. Features 2. Features (1) Fast reverse recovery time trr = 110 ns (typ.) (2) Low drain-source on-resistance RDS(ON) = 0.19 (typ.) by used to Super Junction Str... See More ⇒

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TK17A65W MOSFETs Silicon N-Channel MOS (DTMOS ) TK17A65W TK17A65W TK17A65W TK17A65W 1. Applications 1. Applications 1. Applications 1. Applications Switching Voltage Regulators 2. Features 2. Features 2. Features 2. Features (1) Low drain-source on-resistance RDS(ON) = 0.17 (typ.) by used to Super Junction Structure DTMOS (2) Easy to control Gate switching (3) En... See More ⇒