All MOSFET. TK19J55D Datasheet

 

TK19J55D MOSFET. Datasheet pdf. Equivalent


   Type Designator: TK19J55D
   Marking Code: K19J55D
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pdⓘ - Maximum Power Dissipation: 280 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 550 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
   |Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 4 V
   |Id|ⓘ - Maximum Drain Current: 19 A
   Tjⓘ - Maximum Junction Temperature: 150 °C
   Qgⓘ - Total Gate Charge: 45 nC
   trⓘ - Rise Time: 50 nS
   Cossⓘ - Output Capacitance: 280 pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.33 Ohm
   Package: SC65 TO3P

 TK19J55D Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

TK19J55D Datasheet (PDF)

 ..1. Size:328K  toshiba
tk19j55d.pdf

TK19J55D
TK19J55D

TK19J55DMOSFET NMOS (-MOS)TK19J55DTK19J55DTK19J55DTK19J55D1. 1. 1. 1. 2. 2. 2. 2. (1) : RDS(ON) = 0.28 ()(2) : |Yfs| = 8.5 S ()(3)

Datasheet: FMP36-015P , FMP76-01T , GMM3x100-01X1-SMD , FDMS0306AS , GMM3x120-0075X2-SMD , FDMS0300S , GMM3x160-0055X2-SMD , FDMC7200S , STP80NF70 , FDMC7200 , GMM3x60-015X2-SMD , FDMC0310AS , GWM100-0085X1-SL , FDMS3610S , GWM100-0085X1-SMD , FDMS3606S , GWM100-01X1-SL .

History: STK14N10

 

 
Back to Top