TK19J55D Specs and Replacement

Type Designator: TK19J55D

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 280 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 550 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V

|Id| ⓘ - Maximum Drain Current: 19 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 50 nS

Cossⓘ - Output Capacitance: 280 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.33 Ohm

Package: SC65 TO3P

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TK19J55D datasheet

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TK19J55D

TK19J55D MOSFET N MOS ( -MOS ) TK19J55D TK19J55D TK19J55D TK19J55D 1. 1. 1. 1. 2. 2. 2. 2. (1) RDS(ON) = 0.28 ( ) (2) Yfs = 8.5 S ( ) (3) ... See More ⇒

Detailed specifications: TK16A55D, TK16J55D, TK17A65U, TK17J65U, TK18A30D, TK18A50D, TK18A60V, TK19A45D, AO3401, TK1P90A, TK1Q90A, TK20A25D, TK20A60U, TK20E60U, TK20J50D, TK20J60U, TK20P04M1

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Learn how to find the right MOSFET substitute. A guide to cross-reference, check specs and replace MOSFETs in your circuits.