TK20X60U MOSFET. Datasheet pdf. Equivalent
Type Designator: TK20X60U
Marking Code: K20X60U
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pdⓘ - Maximum Power Dissipation: 150 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 600 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
|Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 5 V
|Id|ⓘ - Maximum Drain Current: 20 A
Tjⓘ - Maximum Junction Temperature: 150 °C
Qgⓘ - Total Gate Charge: 27 nC
trⓘ - Rise Time: 40 nS
Cossⓘ - Output Capacitance: 3500 pF
Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.2 Ohm
Package: SC97 TFP
TK20X60U Transistor Equivalent Substitute - MOSFET Cross-Reference Search
TK20X60U Datasheet (PDF)
tk20x60u.pdf
TK20X60U TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (DTMOS) TK20X60U Switching Regulator Applications Unit: mm Low drain-source ON resistance: RDS (ON) = 0.175 (typ.) High forward transfer admittance: Yfs = 12 S (typ.) Low leakage current: IDSS = 100 A (max) (VDS = 600 V) Enhancement-mode: Vth = 3.0 to 5.0 V (VDS = 10 V, ID = 1 mA)
Datasheet: WPB4002 , FDM15-06KC5 , FQD2N60CTM , FDM47-06KC5 , FDPF045N10A , FMD15-06KC5 , FDMS8672S , FMD21-05QC , IRLB4132 , FDMS86368F085 , FMD47-06KC5 , FDBL86361F085 , FMK75-01F , FMM110-015X2F , FMM150-0075X2F , FMM22-05PF , FMM22-06PF .
History: BLD6G21LS-50 | FCA20N60
History: BLD6G21LS-50 | FCA20N60
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MOSFET: AOUS66923 | AOUS66920 | AOUS66620 | AOUS66616 | AOUS66416 | AOUS66414 | AOTE32136C | AOTE21115C | AOTS32338C | AOTS32334C | AOTS26108 | AOTS21319C | AOTS21313C | AOTS21311C | AOTS21115C | AOTL66918