TK2A65D Specs and Replacement

Type Designator: TK2A65D

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 30 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 650 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V

|Id| ⓘ - Maximum Drain Current: 2 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 15 nS

Cossⓘ - Output Capacitance: 45 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 3.26 Ohm

Package: TO220SIS

TK2A65D substitution

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TK2A65D datasheet

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TK2A65D

TK2A65D MOSFETs Silicon N-Channel MOS ( -MOS ) TK2A65D TK2A65D TK2A65D TK2A65D 1. Applications 1. Applications 1. Applications 1. Applications Switching Voltage Regulators 2. Features 2. Features 2. Features 2. Features (1) Low drain-source on-resistance RDS(ON) = 2.8 (typ.) (2) High forward transfer admittance Yfs = 1.5 S (typ.) (3) Low leakage current IDSS = 1... See More ⇒

Detailed specifications: TK20J50D, TK20J60U, TK20P04M1, TK20S04K3L, TK20S06K3L, TK20X60U, TK25A10K3, TK25A20D, IRF530, TK2P60D, TK2Q60D, TK30A06J3A, TK30A06J3, TK30J25D, TK30S06K3L, TK35S04K3L, TK3A60DA

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