TK2P60D Specs and Replacement

Type Designator: TK2P60D

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 60 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 600 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V

|Id| ⓘ - Maximum Drain Current: 2 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 15 nS

Cossⓘ - Output Capacitance: 30 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 4.3 Ohm

Package: PWMOLD

TK2P60D substitution

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TK2P60D datasheet

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TK2P60D

TK2P60D TOSHIBA Field Effect Transistor Silicon N Channel MOS Type ( -MOS ) TK2P60D Switching Regulator Applications Unit mm 6.5 0.2 5.2 0.2 0.6 MAX. Low drain-source ON-resistance RDS (ON) = 3.3 (typ.) High forward transfer admittance Yfs = 1.0 S (typ.) Low leakage current IDSS = 10 A (VDS = 600 V) Enhancement-mode Vth = 2.4 to 4.4 V... See More ⇒

Detailed specifications: TK20J60U, TK20P04M1, TK20S04K3L, TK20S06K3L, TK20X60U, TK25A10K3, TK25A20D, TK2A65D, CS150N03A8, TK2Q60D, TK30A06J3A, TK30A06J3, TK30J25D, TK30S06K3L, TK35S04K3L, TK3A60DA, TK3A65DA

Keywords - TK2P60D MOSFET specs

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Step-by-step guide to finding a MOSFET replacement. Cross-reference parts and ensure compatibility for your repair or project.