All MOSFET. TK2P60D Datasheet

 

TK2P60D Datasheet and Replacement


   Type Designator: TK2P60D
   Marking Code: K2P60D
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pdⓘ - Maximum Power Dissipation: 60 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 600 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
   |Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 4.4 V
   |Id|ⓘ - Maximum Drain Current: 2 A
   Tjⓘ - Maximum Junction Temperature: 150 °C
   Qgⓘ - Total Gate Charge: 7 nC
   trⓘ - Rise Time: 15 nS
   Cossⓘ - Output Capacitance: 30 pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 4.3 Ohm
   Package: PWMOLD
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TK2P60D Datasheet (PDF)

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TK2P60D

TK2P60D TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (-MOS) TK2P60D Switching Regulator Applications Unit: mm6.5 0.2 5.2 0.2 0.6 MAX. Low drain-source ON-resistance: RDS (ON) = 3.3 (typ.) High forward transfer admittance: Yfs = 1.0 S (typ.) Low leakage current: IDSS = 10 A (VDS = 600 V) Enhancement-mode: Vth = 2.4 to 4.4 V

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