All MOSFET. TK2Q60D Datasheet

 

TK2Q60D Datasheet and Replacement


   Type Designator: TK2Q60D
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 60 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 600 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
   |Id| ⓘ - Maximum Drain Current: 2 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   tr ⓘ - Rise Time: 15 nS
   Cossⓘ - Output Capacitance: 30 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 4.3 Ohm
   Package: PWMOLD2
 

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TK2Q60D Datasheet (PDF)

 ..1. Size:189K  toshiba
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TK2Q60D

TK2Q60D TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (-MOS) TK2Q60D Switching Regulator Applications Unit: mm6.5 0.2 5.2 0.2 Low drain-source ON-resistance: RDS (ON) = 3.2 (typ.) 0.6 MAX. High forward transfer admittance: |Yfs| = 1.0 S (typ.) Low leakage current: IDSS = 10 A (max) (VDS = 600 V) Enhancement mode: Vth = 2.4 to 4.

Datasheet: TK20P04M1 , TK20S04K3L , TK20S06K3L , TK20X60U , TK25A10K3 , TK25A20D , TK2A65D , TK2P60D , IRFP450 , TK30A06J3A , TK30A06J3 , TK30J25D , TK30S06K3L , TK35S04K3L , TK3A60DA , TK3A65DA , TK3A65D .

History: NCEP1580 | FCH190N65F

Keywords - TK2Q60D MOSFET datasheet

 TK2Q60D cross reference
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