TK2Q60D Specs and Replacement

Type Designator: TK2Q60D

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 60 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 600 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V

|Id| ⓘ - Maximum Drain Current: 2 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 15 nS

Cossⓘ - Output Capacitance: 30 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 4.3 Ohm

Package: PWMOLD2

TK2Q60D substitution

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TK2Q60D datasheet

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TK2Q60D

TK2Q60D TOSHIBA Field Effect Transistor Silicon N Channel MOS Type ( -MOS ) TK2Q60D Switching Regulator Applications Unit mm 6.5 0.2 5.2 0.2 Low drain-source ON-resistance RDS (ON) = 3.2 (typ.) 0.6 MAX. High forward transfer admittance Yfs = 1.0 S (typ.) Low leakage current IDSS = 10 A (max) (VDS = 600 V) Enhancement mode Vth = 2.4 to 4.... See More ⇒

Detailed specifications: TK20P04M1, TK20S04K3L, TK20S06K3L, TK20X60U, TK25A10K3, TK25A20D, TK2A65D, TK2P60D, NCEP15T14, TK30A06J3A, TK30A06J3, TK30J25D, TK30S06K3L, TK35S04K3L, TK3A60DA, TK3A65DA, TK3A65D

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Learn how to find the right MOSFET substitute. A guide to cross-reference, check specs and replace MOSFETs in your circuits.