TK30S06K3L MOSFET. Datasheet pdf. Equivalent
Type Designator: TK30S06K3L
Marking Code: K30S06K3
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pdⓘ - Maximum Power Dissipation: 58 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 60 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 3 V
|Id|ⓘ - Maximum Drain Current: 30 A
Tjⓘ - Maximum Junction Temperature: 175 °C
Qgⓘ - Total Gate Charge: 28 nC
trⓘ - Rise Time: 10 nS
Cossⓘ - Output Capacitance: 230 pF
Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.018 Ohm
Package: DPAK
TK30S06K3L Transistor Equivalent Substitute - MOSFET Cross-Reference Search
TK30S06K3L Datasheet (PDF)
tk30s06k3l.pdf
TK30S06K3LMOSFETs Silicon N-channel MOS (U-MOS )TK30S06K3LTK30S06K3LTK30S06K3LTK30S06K3L1. Applications1. Applications1. Applications1. Applications Motor Drivers DC-DC Converters Switching Voltage Regulators2. Features2. Features2. Features2. Features(1) Low drain-source on-resistance: RDS(ON) = 14 m (typ.) (VGS = 10 V)(2) Low leakage current:
Datasheet: IRFP360LC , IRFP3710 , IRFP430 , IRFP431 , IRFP432 , IRFP433 , IRFP440 , IRFP440A , 4N60 , IRFP442 , IRFP443 , IRFP448 , IRFP450 , IRFP450A , IRFP450FI , IRFP450LC , IRFP451 .
History: IXTQ120N20P
History: IXTQ120N20P
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