All MOSFET. TK35S04K3L Datasheet

 

TK35S04K3L Datasheet and Replacement


   Type Designator: TK35S04K3L
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pdⓘ - Maximum Power Dissipation: 58 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 40 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id|ⓘ - Maximum Drain Current: 35 A
   Tjⓘ - Maximum Junction Temperature: 175 °C
   trⓘ - Rise Time: 9 nS
   Cossⓘ - Output Capacitance: 320 pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.0103 Ohm
   Package: DPAK
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TK35S04K3L Datasheet (PDF)

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TK35S04K3L

TK35S04K3LMOSFETs Silicon N-channel MOS (U-MOS )TK35S04K3LTK35S04K3LTK35S04K3LTK35S04K3L1. Applications1. Applications1. Applications1. Applications Motor Drivers DC-DC Converters Switching Voltage Regulators2. Features2. Features2. Features2. Features(1) Low drain-source on-resistance: RDS(ON) = 8.2 m (typ.) (VGS = 10 V)(2) Low leakage current

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History: H8N60P | APT18M80B | FQB6N70TM | STU6NF10 | SI2312A | CED6336 | PE6W8DX

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