TK35S04K3L Specs and Replacement
Type Designator: TK35S04K3L
Type of Transistor: MOSFET
Type of Control Channel: N-Channel
Absolute Maximum Ratings
Pd ⓘ - Maximum Power Dissipation: 58 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 40 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Id| ⓘ - Maximum Drain Current: 35 A
Tj ⓘ - Maximum Junction Temperature: 175 °C
Electrical Characteristics
tr ⓘ - Rise Time: 9 nS
Cossⓘ - Output Capacitance: 320 pF
RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.0103 Ohm
Package: DPAK
TK35S04K3L substitution
- MOSFET ⓘ Cross-Reference Search
TK35S04K3L datasheet
tk35s04k3l.pdf
TK35S04K3L MOSFETs Silicon N-channel MOS (U-MOS ) TK35S04K3L TK35S04K3L TK35S04K3L TK35S04K3L 1. Applications 1. Applications 1. Applications 1. Applications Motor Drivers DC-DC Converters Switching Voltage Regulators 2. Features 2. Features 2. Features 2. Features (1) Low drain-source on-resistance RDS(ON) = 8.2 m (typ.) (VGS = 10 V) (2) Low leakage current... See More ⇒
Detailed specifications: TK25A20D, TK2A65D, TK2P60D, TK2Q60D, TK30A06J3A, TK30A06J3, TK30J25D, TK30S06K3L, AO4407, TK3A60DA, TK3A65DA, TK3A65D, TK3P50D, TK40A08K3, TK40A10J1, TK40A10K3, TK40F08K3
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