TK3P50D Specs and Replacement
Type Designator: TK3P50D
Type of Transistor: MOSFET
Type of Control Channel: N-Channel
Absolute Maximum Ratings
Pd ⓘ - Maximum Power Dissipation: 60 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 500 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
|Id| ⓘ - Maximum Drain Current: 3 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
Electrical Characteristics
tr ⓘ - Rise Time: 20 nS
Cossⓘ - Output Capacitance: 30 pF
RDSonⓘ - Maximum Drain-Source On-State Resistance: 3 Ohm
Package: DPAK
TK3P50D substitution
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TK3P50D datasheet
tk3p50d.pdf
TK3P50D MOSFETs Silicon N-Channel MOS ( -MOS ) TK3P50D TK3P50D TK3P50D TK3P50D 1. Applications 1. Applications 1. Applications 1. Applications Switching Voltage Regulators 2. Features 2. Features 2. Features 2. Features (1) Low drain-source on-resistance RDS(ON) = 2.3 (typ.) (2) High forward transfer admittance Yfs = 1.0 S (typ.) (3) Low leakage current IDSS = 1... See More ⇒
Detailed specifications: TK30A06J3A, TK30A06J3, TK30J25D, TK30S06K3L, TK35S04K3L, TK3A60DA, TK3A65DA, TK3A65D, IRF1407, TK40A08K3, TK40A10J1, TK40A10K3, TK40F08K3, TK40J20D, TK40J60T, TK40J60U, TK40M60U
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