All MOSFET. TK3P50D Datasheet

 

TK3P50D Datasheet and Replacement


   Type Designator: TK3P50D
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 60 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 500 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
   |Id| ⓘ - Maximum Drain Current: 3 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   tr ⓘ - Rise Time: 20 nS
   Cossⓘ - Output Capacitance: 30 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 3 Ohm
   Package: DPAK
 

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TK3P50D Datasheet (PDF)

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TK3P50D

TK3P50DMOSFETs Silicon N-Channel MOS (-MOS)TK3P50DTK3P50DTK3P50DTK3P50D1. Applications1. Applications1. Applications1. Applications Switching Voltage Regulators2. Features2. Features2. Features2. Features(1) Low drain-source on-resistance: RDS(ON) = 2.3 (typ.)(2) High forward transfer admittance: |Yfs| = 1.0 S (typ.)(3) Low leakage current: IDSS = 1

Datasheet: TK30A06J3A , TK30A06J3 , TK30J25D , TK30S06K3L , TK35S04K3L , TK3A60DA , TK3A65DA , TK3A65D , P0903BDG , TK40A08K3 , TK40A10J1 , TK40A10K3 , TK40F08K3 , TK40J20D , TK40J60T , TK40J60U , TK40M60U .

History: IPW65R080CFD | SVG094R1NKL

Keywords - TK3P50D MOSFET datasheet

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