TK40M60U Specs and Replacement
Type Designator: TK40M60U
Type of Transistor: MOSFET
Type of Control Channel: N-Channel
Absolute Maximum Ratings
Pd ⓘ - Maximum Power Dissipation: 90 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 600 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
|Id| ⓘ - Maximum Drain Current: 40 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
Electrical Characteristics
tr ⓘ - Rise Time: 60 nS
Cossⓘ - Output Capacitance: 7800 pF
RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.08 Ohm
Package: TO3P
TK40M60U substitution
- MOSFET ⓘ Cross-Reference Search
TK40M60U datasheet
tk40m60u.pdf
TK40M60U MOSFETs Silicon N-Channel MOS (DTMOS ) TK40M60U TK40M60U TK40M60U TK40M60U 1. Applications 1. Applications 1. Applications 1. Applications Switching Voltage Regulators 2. Features 2. Features 2. Features 2. Features (1) Low drain-source on-resistance RDS(ON) = 0.065 (typ.) (2) High forward transfer admittance Yfs = 30 S (typ.) (3) Low leakage current IDS... See More ⇒
Detailed specifications: TK3P50D, TK40A08K3, TK40A10J1, TK40A10K3, TK40F08K3, TK40J20D, TK40J60T, TK40J60U, 20N50, TK40P03M1, TK40P04M1, TK40S10K3Z, TK40X10J1, TK45P03M1, TK4A50D, TK4A53D, TK4A55DA
Keywords - TK40M60U MOSFET specs
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