All MOSFET. TK40S10K3Z Datasheet

 

TK40S10K3Z Datasheet and Replacement


   Type Designator: TK40S10K3Z
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 93 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 100 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id| ⓘ - Maximum Drain Current: 40 A
   Tj ⓘ - Maximum Junction Temperature: 175 °C
   tr ⓘ - Rise Time: 22 nS
   Cossⓘ - Output Capacitance: 400 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.018 Ohm
   Package: DPAK
 
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TK40S10K3Z Datasheet (PDF)

 ..1. Size:243K  toshiba
 tk40s10k3z.pdf pdf_icon

TK40S10K3Z

TK40S10K3ZMOSFETs Silicon N-channel MOS (U-MOS )TK40S10K3ZTK40S10K3ZTK40S10K3ZTK40S10K3Z1. Applications1. Applications1. Applications1. Applications Motor Drivers DC-DC Converters Switching Voltage Regulators2. Features2. Features2. Features2. Features(1) Low drain-source on-resistance: RDS(ON) = 14.4 m (typ.) (VGS = 10 V)(2) Low leakage curren

 9.1. Size:258K  toshiba
 tk40s06n1l.pdf pdf_icon

TK40S10K3Z

TK40S06N1LMOSFETs Silicon N-channel MOS (U-MOS-H)TK40S06N1LTK40S06N1LTK40S06N1LTK40S06N1L1. Applications1. Applications1. Applications1. Applications Automotive Motor Drivers Switching Voltage Regulators2. Features2. Features2. Features2. Features(1) Low drain-source on-resistance: RDS(ON) = 8.7 m (typ.) (VGS = 10 V)(2) Low leakage current: IDS

Datasheet: TK40A10K3 , TK40F08K3 , TK40J20D , TK40J60T , TK40J60U , TK40M60U , TK40P03M1 , TK40P04M1 , IRF2807 , TK40X10J1 , TK45P03M1 , TK4A50D , TK4A53D , TK4A55DA , TK4A55D , TK4A60DA , TK4A60DB .

Keywords - TK40S10K3Z MOSFET datasheet

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