TK40S10K3Z Specs and Replacement

Type Designator: TK40S10K3Z

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 93 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 100 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V

|Id| ⓘ - Maximum Drain Current: 40 A

Tj ⓘ - Maximum Junction Temperature: 175 °C

Electrical Characteristics

tr ⓘ - Rise Time: 22 nS

Cossⓘ - Output Capacitance: 400 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.018 Ohm

Package: DPAK

TK40S10K3Z substitution

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TK40S10K3Z datasheet

 ..1. Size:243K  toshiba
 tk40s10k3z.pdf pdf_icon

TK40S10K3Z

TK40S10K3Z MOSFETs Silicon N-channel MOS (U-MOS ) TK40S10K3Z TK40S10K3Z TK40S10K3Z TK40S10K3Z 1. Applications 1. Applications 1. Applications 1. Applications Motor Drivers DC-DC Converters Switching Voltage Regulators 2. Features 2. Features 2. Features 2. Features (1) Low drain-source on-resistance RDS(ON) = 14.4 m (typ.) (VGS = 10 V) (2) Low leakage curren... See More ⇒

 9.1. Size:258K  toshiba
 tk40s06n1l.pdf pdf_icon

TK40S10K3Z

TK40S06N1L MOSFETs Silicon N-channel MOS (U-MOS -H) TK40S06N1L TK40S06N1L TK40S06N1L TK40S06N1L 1. Applications 1. Applications 1. Applications 1. Applications Automotive Motor Drivers Switching Voltage Regulators 2. Features 2. Features 2. Features 2. Features (1) Low drain-source on-resistance RDS(ON) = 8.7 m (typ.) (VGS = 10 V) (2) Low leakage current IDS... See More ⇒

Detailed specifications: TK40A10K3, TK40F08K3, TK40J20D, TK40J60T, TK40J60U, TK40M60U, TK40P03M1, TK40P04M1, STF13NM60N, TK40X10J1, TK45P03M1, TK4A50D, TK4A53D, TK4A55DA, TK4A55D, TK4A60DA, TK4A60DB

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