All MOSFET. TK40X10J1 Datasheet

 

TK40X10J1 MOSFET. Datasheet pdf. Equivalent


   Type Designator: TK40X10J1
   Marking Code: K40X10J
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pdⓘ - Maximum Power Dissipation: 125 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 100 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 4 V
   |Id|ⓘ - Maximum Drain Current: 40 A
   Tjⓘ - Maximum Junction Temperature: 175 °C
   Qgⓘ - Total Gate Charge: 59 nC
   trⓘ - Rise Time: 7 nS
   Cossⓘ - Output Capacitance: 580 pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.02 Ohm
   Package: SC97 TFP

 TK40X10J1 Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

TK40X10J1 Datasheet (PDF)

 ..1. Size:211K  toshiba
 tk40x10j1.pdf

TK40X10J1 TK40X10J1

TK40X10J1 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (Ultra-High-Speed U-MOS) TK40X10J1 Switching Regulator, DC-DC Converter Applications Unit: mmMotor Drive Applications Small gate charge : Qg = 59 nC (typ.) Low drain-source ON-resistance: RDS (ON) = 15 m(typ.) High forward transfer admittance: |Yfs| = 60 S (typ.) Low leakage current: ID

Datasheet: IRFP344 , IRFP350 , IRFP350A , IRFP350FI , IRFP350LC , IRFP351 , IRFP352 , IRFP353 , IRF1010E , IRFP360 , IRFP360LC , IRFP3710 , IRFP430 , IRFP431 , IRFP432 , IRFP433 , IRFP440 .

 

 
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