TK4A55D Datasheet and Replacement

TK4A55D TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (-MOS) TK4A55D Switching Regulator Applications Unit: mm2.7 0.2 10 0.3 3.2 0.2 A Low drain-source ON resistance: RDS (ON) = 1.5 (typ.) High forward transfer admittance: Yfs = 2.0 S (typ.) Low leakage current : IDSS = 10 A (max) (VDS = 550 V) Enhancement-mode

INCHANGE SemiconductoriscN-Channel MOSFET Transistor TK4A55DITK4A55DFEATURESLow drain-source on-resistance:RDS(ON) = 1.5 (typ.)Enhancement mode:Vth = 2.4 to 4.4V (VDS = 10 V, ID=1.0mA)100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRITIONSwitching Voltage RegulatorsABSOLUTE MAXIMUM RATINGS(T

TK4A55DA TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (-MOS) TK4A55DA Switching Regulator Applications Unit: mm2.7 0.210 0.3 3.2 0.2 A Low drain-source ON-resistance: RDS (ON) = 2.0 (typ.) High forward transfer admittance: |Yfs| = 1.8 S (typ.) Low leakage current: IDSS = 10 A (max) (VDS = 550 V) Enhancement mode: Vth =

INCHANGE SemiconductoriscN-Channel MOSFET Transistor TK4A55DAITK4A55DAFEATURESLow drain-source on-resistance:RDS(ON) = 2.0 (typ.)Enhancement mode:Vth = 2.4 to 4.4V (VDS = 10 V, ID=1.0mA)100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRITIONSwitching Voltage RegulatorsABSOLUTE MAXIMUM RATING

TK4A50D TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (-MOS) TK4A50D Switching Regulator Applications Unit: mm Low drain-source ON-resistance: RDS (ON) = 1.7(typ.) High forward transfer admittance: |Yfs| = 1.5 S (typ.) Low leakage current: IDSS = 10 A (max) (VDS = 500 V) Enhancement mode: Vth = 2.4 to 4.4 V (VDS = 10 V, ID = 1 mA) Absolute

TK4A53D TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (-MOS) TK4A53D Switching Regulator Applications Unit: mm2.7 0.210 0.3 3.2 0.2 A Low drain-source ON-resistance: RDS (ON) = 1.3 (typ.) High forward transfer admittance: |Yfs| = 3.0 S (typ.) Low leakage current: IDSS = 10 A (max) (VDS = 525 V) Enhancement mode: Vth = 2

INCHANGE SemiconductoriscN-Channel MOSFET Transistor TK4A50DITK4A50DFEATURESLow drain-source on-resistance:RDS(ON) = 1.7 (typ.)Enhancement mode:Vth = 2.4 to 4.4V (VDS = 10 V, ID=1.0mA)100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRITIONSwitching Voltage RegulatorsABSOLUTE MAXIMUM RATINGS(T

INCHANGE SemiconductoriscN-Channel MOSFET Transistor TK4A53DITK4A53DFEATURESLow drain-source on-resistance:RDS(ON) = 1.3 (typ.)Enhancement mode:Vth = 2.4 to 4.4V (VDS = 10 V, ID=1.0mA)100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRITIONSwitching Voltage RegulatorsABSOLUTE MAXIMUM RATINGS(T