All MOSFET. TK4A55D Datasheet

 

TK4A55D MOSFET. Datasheet pdf. Equivalent

Type Designator: TK4A55D

Marking Code: K4A55D

Type of Transistor: MOSFET

Type of Control Channel: N -Channel

Maximum Power Dissipation (Pd): 35 W

Maximum Drain-Source Voltage |Vds|: 550 V

Maximum Gate-Source Voltage |Vgs|: 30 V

Maximum Gate-Threshold Voltage |Vgs(th)|: 4.4 V

Maximum Drain Current |Id|: 4 A

Maximum Junction Temperature (Tj): 150 °C

Total Gate Charge (Qg): 11 nC

Rise Time (tr): 18 nS

Drain-Source Capacitance (Cd): 55 pF

Maximum Drain-Source On-State Resistance (Rds): 1.88 Ohm

Package: TO220SIS

TK4A55D Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

TK4A55D Datasheet (PDF)

0.1. tk4a55da.pdf Size:190K _toshiba

TK4A55D
TK4A55D

TK4A55DA TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (π-MOSⅦ) TK4A55DA Switching Regulator Applications Unit: mm 2.7 ± 0.2 10 ± 0.3 Ф3.2 ± 0.2 A • Low drain-source ON-resistance: RDS (ON) = 2.0 Ω(typ.) • High forward transfer admittance: |Yfs| = 1.8 S (typ.) • Low leakage current: IDSS = 10 μA (max) (VDS = 550 V) • Enhancement mode: Vth =

0.2. tk4a55d.pdf Size:189K _toshiba

TK4A55D
TK4A55D

TK4A55D TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (π-MOSⅦ) TK4A55D Switching Regulator Applications Unit: mm 2.7 ± 0.2 10 ± 0.3 Ф3.2 ± 0.2 A • Low drain-source ON resistance: RDS (ON) = 1.5 Ω (typ.) • High forward transfer admittance: ⎪Yfs⎪ = 2.0 S (typ.) • Low leakage current : IDSS = 10 μA (max) (VDS = 550 V) • Enhancement-mode

 9.1. tk4a53d.pdf Size:189K _toshiba

TK4A55D
TK4A55D

TK4A53D TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (π-MOSⅦ) TK4A53D Switching Regulator Applications Unit: mm 2.7 ± 0.2 10 ± 0.3 Ф3.2 ± 0.2 A • Low drain-source ON-resistance: RDS (ON) = 1.3 Ω(typ.) • High forward transfer admittance: |Yfs| = 3.0 S (typ.) • Low leakage current: IDSS = 10 μA (max) (VDS = 525 V) • Enhancement mode: Vth = 2

9.2. tk4a50d.pdf Size:211K _toshiba

TK4A55D
TK4A55D

TK4A50D TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (π-MOSⅦ) TK4A50D Switching Regulator Applications Unit: mm • Low drain-source ON-resistance: RDS (ON) = 1.7Ω(typ.) • High forward transfer admittance: |Yfs| = 1.5 S (typ.) • Low leakage current: IDSS = 10 μA (max) (VDS = 500 V) • Enhancement mode: Vth = 2.4 to 4.4 V (VDS = 10 V, ID = 1 mA) Absolute

Datasheet: IRFP360LC , IRFP3710 , IRFP430 , IRFP431 , IRFP432 , IRFP433 , IRFP440 , IRFP440A , J310 , IRFP442 , IRFP443 , IRFP448 , IRFP450 , IRFP450A , IRFP450FI , IRFP450LC , IRFP451 .

 

 
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