TK50J30D Specs and Replacement
Type Designator: TK50J30D
Type of Transistor: MOSFET
Type of Control Channel: N-Channel
Absolute Maximum Ratings
Pd ⓘ - Maximum Power Dissipation: 410 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 300 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Id| ⓘ - Maximum Drain Current: 50 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
Electrical Characteristics
tr ⓘ - Rise Time: 150 nS
Cossⓘ - Output Capacitance: 345 pF
RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.052 Ohm
TK50J30D substitution
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TK50J30D datasheet
tk50j30d.pdf
TK50J30D MOSFETs Silicon N-Channel MOS ( -MOS ) TK50J30D TK50J30D TK50J30D TK50J30D 1. Applications 1. Applications 1. Applications 1. Applications Switching Voltage Regulators 2. Features 2. Features 2. Features 2. Features (1) Low drain-source on-resistance RDS(ON) = 0.04 (typ.) (2) Low leakage current IDSS = 10 A (max) (VDS = 300 V) (3) Enhancement mode Vth =... See More ⇒
tk50j60u.pdf
TK50J60U MOSFETs Silicon N-Channel MOS (DTMOS ) TK50J60U TK50J60U TK50J60U TK50J60U 1. Applications 1. Applications 1. Applications 1. Applications Switching Voltage Regulators 2. Features 2. Features 2. Features 2. Features (1) Low drain-source on-resistance RDS(ON) = 0.056 (typ.) (2) High forward transfer admittance Yfs = 30 S (typ.) (3) Low leakage current IDS... See More ⇒
Detailed specifications: TK4A60DB, TK4A60D, TK4A65DA, TK4P50D, TK4P55DA, TK4P55D, TK4P60DA, TK4P60DB, IRFB7545, TK50J60U, TK50P03M1, TK50P04M1, TK50X15J1, TK55A10J1, TK5A45DA, TK5A50D, TK5A53D
Keywords - TK50J30D MOSFET specs
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Learn how to find the right MOSFET substitute. A guide to cross-reference, check specs and replace MOSFETs in your circuits.
