All MOSFET. TK50J30D Datasheet

 

TK50J30D Datasheet and Replacement


   Type Designator: TK50J30D
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 410 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 300 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id| ⓘ - Maximum Drain Current: 50 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   tr ⓘ - Rise Time: 150 nS
   Cossⓘ - Output Capacitance: 345 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.052 Ohm
   Package: SC65 TO3P
 

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TK50J30D Datasheet (PDF)

 ..1. Size:232K  toshiba
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TK50J30D

TK50J30DMOSFETs Silicon N-Channel MOS (-MOS)TK50J30DTK50J30DTK50J30DTK50J30D1. Applications1. Applications1. Applications1. Applications Switching Voltage Regulators2. Features2. Features2. Features2. Features(1) Low drain-source on-resistance: RDS(ON) = 0.04 (typ.)(2) Low leakage current: IDSS = 10 A (max) (VDS = 300 V)(3) Enhancement mode: Vth =

 9.1. Size:336K  toshiba
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TK50J30D

TK50J60UMOSFETs Silicon N-Channel MOS (DTMOS)TK50J60UTK50J60UTK50J60UTK50J60U1. Applications1. Applications1. Applications1. Applications Switching Voltage Regulators2. Features2. Features2. Features2. Features(1) Low drain-source on-resistance: RDS(ON) = 0.056 (typ.)(2) High forward transfer admittance: |Yfs| = 30 S (typ.)(3) Low leakage current: IDS

Datasheet: TK4A60DB , TK4A60D , TK4A65DA , TK4P50D , TK4P55DA , TK4P55D , TK4P60DA , TK4P60DB , 8N60 , TK50J60U , TK50P03M1 , TK50P04M1 , TK50X15J1 , TK55A10J1 , TK5A45DA , TK5A50D , TK5A53D .

History: HYG023N03LR1U | 18N20

Keywords - TK50J30D MOSFET datasheet

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