All MOSFET. TK50J30D Datasheet

 

TK50J30D MOSFET. Datasheet pdf. Equivalent


   Type Designator: TK50J30D
   Marking Code: K50J30D
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pdⓘ - Maximum Power Dissipation: 410 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 300 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 3.5 V
   |Id|ⓘ - Maximum Drain Current: 50 A
   Tjⓘ - Maximum Junction Temperature: 150 °C
   Qgⓘ - Total Gate Charge: 160 nC
   trⓘ - Rise Time: 150 nS
   Cossⓘ - Output Capacitance: 345 pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.052 Ohm
   Package: SC65 TO3P

 TK50J30D Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

TK50J30D Datasheet (PDF)

 ..1. Size:232K  toshiba
 tk50j30d.pdf

TK50J30D TK50J30D

TK50J30DMOSFETs Silicon N-Channel MOS (-MOS)TK50J30DTK50J30DTK50J30DTK50J30D1. Applications1. Applications1. Applications1. Applications Switching Voltage Regulators2. Features2. Features2. Features2. Features(1) Low drain-source on-resistance: RDS(ON) = 0.04 (typ.)(2) Low leakage current: IDSS = 10 A (max) (VDS = 300 V)(3) Enhancement mode: Vth =

 9.1. Size:336K  toshiba
 tk50j60u.pdf

TK50J30D TK50J30D

TK50J60UMOSFETs Silicon N-Channel MOS (DTMOS)TK50J60UTK50J60UTK50J60UTK50J60U1. Applications1. Applications1. Applications1. Applications Switching Voltage Regulators2. Features2. Features2. Features2. Features(1) Low drain-source on-resistance: RDS(ON) = 0.056 (typ.)(2) High forward transfer admittance: |Yfs| = 30 S (typ.)(3) Low leakage current: IDS

Datasheet: FMP36-015P , FMP76-01T , GMM3x100-01X1-SMD , FDMS0306AS , GMM3x120-0075X2-SMD , FDMS0300S , GMM3x160-0055X2-SMD , FDMC7200S , IRFB3607 , FDMC7200 , GMM3x60-015X2-SMD , FDMC0310AS , GWM100-0085X1-SL , FDMS3610S , GWM100-0085X1-SMD , FDMS3606S , GWM100-01X1-SL .

History: FS10KM-9

 

 
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