TK50J60U Specs and Replacement

Type Designator: TK50J60U

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 400 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 600 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V

|Id| ⓘ - Maximum Drain Current: 50 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 90 nS

Cossⓘ - Output Capacitance: 210 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.065 Ohm

Package: SC65 TO3P

TK50J60U substitution

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TK50J60U datasheet

 ..1. Size:336K  toshiba
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TK50J60U

TK50J60U MOSFETs Silicon N-Channel MOS (DTMOS ) TK50J60U TK50J60U TK50J60U TK50J60U 1. Applications 1. Applications 1. Applications 1. Applications Switching Voltage Regulators 2. Features 2. Features 2. Features 2. Features (1) Low drain-source on-resistance RDS(ON) = 0.056 (typ.) (2) High forward transfer admittance Yfs = 30 S (typ.) (3) Low leakage current IDS... See More ⇒

 9.1. Size:232K  toshiba
tk50j30d.pdf pdf_icon

TK50J60U

TK50J30D MOSFETs Silicon N-Channel MOS ( -MOS ) TK50J30D TK50J30D TK50J30D TK50J30D 1. Applications 1. Applications 1. Applications 1. Applications Switching Voltage Regulators 2. Features 2. Features 2. Features 2. Features (1) Low drain-source on-resistance RDS(ON) = 0.04 (typ.) (2) Low leakage current IDSS = 10 A (max) (VDS = 300 V) (3) Enhancement mode Vth =... See More ⇒

Detailed specifications: TK4A60D, TK4A65DA, TK4P50D, TK4P55DA, TK4P55D, TK4P60DA, TK4P60DB, TK50J30D, AON7403, TK50P03M1, TK50P04M1, TK50X15J1, TK55A10J1, TK5A45DA, TK5A50D, TK5A53D, TK5A55D

Keywords - TK50J60U MOSFET specs

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