TK50X15J1 Specs and Replacement

Type Designator: TK50X15J1

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 125 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 150 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V

|Id| ⓘ - Maximum Drain Current: 50 A

Tj ⓘ - Maximum Junction Temperature: 175 °C

Electrical Characteristics

tr ⓘ - Rise Time: 7 nS

Cossⓘ - Output Capacitance: 640 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.03 Ohm

Package: SC97 TFP

TK50X15J1 substitution

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TK50X15J1 datasheet

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TK50X15J1

TK50X15J1 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (Ultra-High-Speed U-MOS ) TK50X15J1 DC-DC Converters Unit mm Low drain-source ON-resistance RDS (ON) = 22 m (typ.) High forward transfer admittance Yfs = 90 S (typ.) Low leakage current IDSS = 10 A (max) (VDS = 150 V) Enhancement mode Vth = 2.0 to 4.0 V (VDS = 10 V, ID = 1 mA) Ab... See More ⇒

Detailed specifications: TK4P55DA, TK4P55D, TK4P60DA, TK4P60DB, TK50J30D, TK50J60U, TK50P03M1, TK50P04M1, RU7088R, TK55A10J1, TK5A45DA, TK5A50D, TK5A53D, TK5A55D, TK5A60D, TK5A65DA, TK5A65D

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Learn how to find the right MOSFET substitute. A guide to cross-reference, check specs and replace MOSFETs in your circuits.