All MOSFET. TK60A08J1 Datasheet

 

TK60A08J1 Datasheet and Replacement


   Type Designator: TK60A08J1
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 45 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 75 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id| ⓘ - Maximum Drain Current: 60 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   tr ⓘ - Rise Time: 5 nS
   Cossⓘ - Output Capacitance: 1260 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.0078 Ohm
   Package: TO220SIS
 

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TK60A08J1 Datasheet (PDF)

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TK60A08J1

TK60A08J1 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (Ultra-High-Speed U-MOS) TK60A08J1 Switching Regulator Application Unit: mm High-Speed switching Small gate charge: Qg = 86 nC (typ.) Low drain-source ON resistance: RDS (ON) = 6.2 m (typ.) High forward transfer admittance: |Yfs| = 120 S (typ.) Low leakage current: IDSS = 10 A (max)

Datasheet: TK5A50D , TK5A53D , TK5A55D , TK5A60D , TK5A65DA , TK5A65D , TK5P50D , TK5P53D , IRF840 , TK60J25D , TK60P03M1 , TK60S06K3L , TK65L60V , TK65S04K3L , TK6A45DA , TK6A50D , TK6A53D .

History: SE2303 | WMB60P02TS

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