TK60A08J1 Specs and Replacement
Type Designator: TK60A08J1
Type of Transistor: MOSFET
Type of Control Channel: N-Channel
Absolute Maximum Ratings
Pd ⓘ - Maximum Power Dissipation: 45 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 75 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Id| ⓘ - Maximum Drain Current: 60 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
Electrical Characteristics
tr ⓘ - Rise Time: 5 nS
Cossⓘ - Output Capacitance: 1260 pF
RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.0078 Ohm
Package: TO220SIS
TK60A08J1 substitution
- MOSFET ⓘ Cross-Reference Search
TK60A08J1 datasheet
tk60a08j1.pdf
TK60A08J1 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (Ultra-High-Speed U-MOS ) TK60A08J1 Switching Regulator Application Unit mm High-Speed switching Small gate charge Qg = 86 nC (typ.) Low drain-source ON resistance RDS (ON) = 6.2 m (typ.) High forward transfer admittance Yfs = 120 S (typ.) Low leakage current IDSS = 10 A (max) ... See More ⇒
Detailed specifications: TK5A50D, TK5A53D, TK5A55D, TK5A60D, TK5A65DA, TK5A65D, TK5P50D, TK5P53D, IRF840, TK60J25D, TK60P03M1, TK60S06K3L, TK65L60V, TK65S04K3L, TK6A45DA, TK6A50D, TK6A53D
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Step-by-step guide to finding a MOSFET replacement. Cross-reference parts and ensure compatibility for your repair or project.
