TK60A08J1 Datasheet and Replacement
Type Designator: TK60A08J1
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pd ⓘ - Maximum Power Dissipation: 45 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 75 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Id| ⓘ - Maximum Drain Current: 60 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
tr ⓘ - Rise Time: 5 nS
Cossⓘ - Output Capacitance: 1260 pF
Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.0078 Ohm
Package: TO220SIS
TK60A08J1 substitution
TK60A08J1 Datasheet (PDF)
tk60a08j1.pdf

TK60A08J1 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (Ultra-High-Speed U-MOS) TK60A08J1 Switching Regulator Application Unit: mm High-Speed switching Small gate charge: Qg = 86 nC (typ.) Low drain-source ON resistance: RDS (ON) = 6.2 m (typ.) High forward transfer admittance: |Yfs| = 120 S (typ.) Low leakage current: IDSS = 10 A (max)
Datasheet: TK5A50D , TK5A53D , TK5A55D , TK5A60D , TK5A65DA , TK5A65D , TK5P50D , TK5P53D , IRF840 , TK60J25D , TK60P03M1 , TK60S06K3L , TK65L60V , TK65S04K3L , TK6A45DA , TK6A50D , TK6A53D .
History: SE2303 | WMB60P02TS
Keywords - TK60A08J1 MOSFET datasheet
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History: SE2303 | WMB60P02TS



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