TK60J25D Datasheet. Specs and Replacement
Type Designator: TK60J25D 📄📄
Type of Transistor: MOSFET
Type of Control Channel: N-Channel
Absolute Maximum Ratings
Pd ⓘ - Maximum Power Dissipation: 410 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 250 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Id| ⓘ - Maximum Drain Current: 60 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
Electrical Characteristics
tr ⓘ - Rise Time: 150 nS
Cossⓘ - Output Capacitance: 400 pF
RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.038 Ohm
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TK60J25D datasheet
tk60j25d.pdf
TK60J25D MOSFETs Silicon N-Channel MOS ( -MOS ) TK60J25D TK60J25D TK60J25D TK60J25D 1. Applications 1. Applications 1. Applications 1. Applications Switching Voltage Regulators 2. Features 2. Features 2. Features 2. Features (1) Low drain-source on-resistance RDS(ON) = 0.0285 (typ.) (2) Low leakage current IDSS = 10 A (max) (VDS = 250 V) (3) Enhancement mode Vth... See More ⇒
Detailed specifications: TK5A53D, TK5A55D, TK5A60D, TK5A65DA, TK5A65D, TK5P50D, TK5P53D, TK60A08J1, 20N60, TK60P03M1, TK60S06K3L, TK65L60V, TK65S04K3L, TK6A45DA, TK6A50D, TK6A53D, TK6A55DA
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