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TK60J25D Spec and Replacement


   Type Designator: TK60J25D
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 410 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 250 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id| ⓘ - Maximum Drain Current: 60 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   tr ⓘ - Rise Time: 150 nS
   Cossⓘ - Output Capacitance: 400 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.038 Ohm
   Package: SC65 TO3P

 TK60J25D Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

TK60J25D Specs

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TK60J25D

TK60J25D MOSFETs Silicon N-Channel MOS ( -MOS ) TK60J25D TK60J25D TK60J25D TK60J25D 1. Applications 1. Applications 1. Applications 1. Applications Switching Voltage Regulators 2. Features 2. Features 2. Features 2. Features (1) Low drain-source on-resistance RDS(ON) = 0.0285 (typ.) (2) Low leakage current IDSS = 10 A (max) (VDS = 250 V) (3) Enhancement mode Vth... See More ⇒

Detailed specifications: TK5A53D , TK5A55D , TK5A60D , TK5A65DA , TK5A65D , TK5P50D , TK5P53D , TK60A08J1 , 20N60 , TK60P03M1 , TK60S06K3L , TK65L60V , TK65S04K3L , TK6A45DA , TK6A50D , TK6A53D , TK6A55DA .

History: HUFA76429D3 | TSA23N50M | PDC3902X

Keywords - TK60J25D MOSFET specs

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