TK60P03M1 MOSFET Datasheet: N-Ch, 30V, 60A. Full specification with pinout and replacement list

TK60P03M1 Specs and Replacement

   Type Designator: TK60P03M1
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel

Absolute Maximum Ratings

   Pd ⓘ - Maximum Power Dissipation: 63 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 30 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id| ⓘ - Maximum Drain Current: 60 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

   tr ⓘ - Rise Time: 4.3 nS
   Cossⓘ - Output Capacitance: 520 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.0064 Ohm
   Package: DPAK

TK60P03M1 substitution

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TK60P03M1 datasheet

..1. Size:231K toshiba
tk60p03m1.pdf pdf_icon

TK60P03M1 MOSFETs Silicon N-Channel MOS (U-MOS -H) TK60P03M1 TK60P03M1 TK60P03M1 TK60P03M1 1. Applications 1. Applications 1. Applications 1. Applications DC-DC Converters Desktop Computers 2. Features 2. Features 2. Features 2. Features (1) High-speed switching (2) Low gate charge QSW = 13 nC (typ.) (3) Low drain-source on-resistance RDS(ON) = 4.6 m (typ.) (VGS... See More ⇒

8.1. Size:455K first silicon
ftk60p05s.pdf pdf_icon

SEMICONDUCTOR FTK60P05S TECHNICAL DATA P-Channel Enhancement Mode Power MOSFET ID V(BR)DSS RDS(on)MAX SOP-8 -5A 10V -60V 80m @- Description The FTK60P05S uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. Feature Application VDS =-60V,ID =-5A Power switching application ... See More ⇒

Detailed specifications: TK5A55D , TK5A60D , TK5A65DA , TK5A65D , TK5P50D , TK5P53D , TK60A08J1 , TK60J25D , IRF540N , TK60S06K3L , TK65L60V , TK65S04K3L , TK6A45DA , TK6A50D , TK6A53D , TK6A55DA , TK6A60D .