All MOSFET. TK60P03M1 Datasheet

 

TK60P03M1 Datasheet and Replacement


   Type Designator: TK60P03M1
   Marking Code: K60P03M
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 63 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 30 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 2.3 V
   |Id| ⓘ - Maximum Drain Current: 60 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   Qg ⓘ - Total Gate Charge: 40 nC
   tr ⓘ - Rise Time: 4.3 nS
   Cossⓘ - Output Capacitance: 520 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.0064 Ohm
   Package: DPAK
 

 TK60P03M1 substitution

   - MOSFET ⓘ Cross-Reference Search

 

TK60P03M1 Datasheet (PDF)

 ..1. Size:231K  toshiba
 tk60p03m1.pdf pdf_icon

TK60P03M1

TK60P03M1MOSFETs Silicon N-Channel MOS (U-MOS-H)TK60P03M1TK60P03M1TK60P03M1TK60P03M11. Applications1. Applications1. Applications1. Applications DC-DC Converters Desktop Computers2. Features2. Features2. Features2. Features(1) High-speed switching(2) Low gate charge: QSW = 13 nC (typ.)(3) Low drain-source on-resistance: RDS(ON) = 4.6 m (typ.) (VGS

 8.1. Size:455K  first silicon
 ftk60p05s.pdf pdf_icon

TK60P03M1

SEMICONDUCTOR FTK60P05STECHNICAL DATAP-Channel Enhancement Mode Power MOSFET ID V(BR)DSS RDS(on)MAX SOP-8-5A 10V -60V 80m@-DescriptionThe FTK60P05S uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. Feature Application VDS =-60V,ID =-5A Power switching application

Datasheet: TK5A55D , TK5A60D , TK5A65DA , TK5A65D , TK5P50D , TK5P53D , TK60A08J1 , TK60J25D , IRF540 , TK60S06K3L , TK65L60V , TK65S04K3L , TK6A45DA , TK6A50D , TK6A53D , TK6A55DA , TK6A60D .

History: NDP4050

Keywords - TK60P03M1 MOSFET datasheet

 TK60P03M1 cross reference
 TK60P03M1 equivalent finder
 TK60P03M1 lookup
 TK60P03M1 substitution
 TK60P03M1 replacement

 

 
Back to Top

 


 
.