All MOSFET. TK60P03M1 Datasheet

 

TK60P03M1 MOSFET. Datasheet pdf. Equivalent

Type Designator: TK60P03M1

Type of Transistor: MOSFET

Type of Control Channel: N -Channel

Maximum Power Dissipation (Pd): 63 W

Maximum Drain-Source Voltage |Vds|: 30 V

Maximum Gate-Source Voltage |Vgs|: 20 V

Maximum Gate-Threshold Voltage |Vgs(th)|: 2.3 V

Maximum Drain Current |Id|: 60 A

Maximum Junction Temperature (Tj): 150 °C

Total Gate Charge (Qg): 40 nC

Maximum Drain-Source On-State Resistance (Rds): 0.0064 Ohm

Package: DPAK

TK60P03M1 Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

TK60P03M1 Datasheet (PDF)

0.1. tk60p03m1.pdf Size:231K _toshiba

TK60P03M1
TK60P03M1

TK60P03M1 MOSFETs Silicon N-Channel MOS (U-MOS-H) TK60P03M1 TK60P03M1 TK60P03M1 TK60P03M1 1. Applications 1. Applications 1. Applications 1. Applications • DC-DC Converters • Desktop Computers 2. Features 2. Features 2. Features 2. Features (1) High-speed switching (2) Low gate charge: QSW = 13 nC (typ.) (3) Low drain-source on-resistance: RDS(ON) = 4.6 mΩ (typ.) (VGS

8.1. ftk60p05s.pdf Size:455K _first_silicon

TK60P03M1
TK60P03M1

SEMICONDUCTOR FTK60P05S TECHNICAL DATA P-Channel Enhancement Mode Power MOSFET ID V(BR)DSS RDS(on)MAX SOP-8 -5A 10V -60V 80mΩ@- Description The FTK60P05S uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. Feature Application VDS =-60V,ID =-5A Power switching application

 

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