All MOSFET. TK65S04K3L Datasheet

 

TK65S04K3L MOSFET. Datasheet pdf. Equivalent

Type Designator: TK65S04K3L

Type of Transistor: MOSFET

Type of Control Channel: N -Channel

Maximum Power Dissipation (Pd): 88 W

Maximum Drain-Source Voltage |Vds|: 40 V

Maximum Gate-Source Voltage |Vgs|: 20 V

Maximum Gate-Threshold Voltage |Vgs(th)|: 3 V

Maximum Drain Current |Id|: 65 A

Maximum Junction Temperature (Tj): 175 °C

Total Gate Charge (Qg): 63 nC

Maximum Drain-Source On-State Resistance (Rds): 0.0045 Ohm

Package: DPAK

TK65S04K3L Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

TK65S04K3L Datasheet (PDF)

0.1. tk65s04k3l.pdf Size:245K _toshiba

TK65S04K3L
TK65S04K3L

TK65S04K3L MOSFETs Silicon N-channel MOS (U-MOS ) TK65S04K3L TK65S04K3L TK65S04K3L TK65S04K3L 1. Applications 1. Applications 1. Applications 1. Applications • Motor Drivers • DC-DC Converters • Switching Voltage Regulators 2. Features 2. Features 2. Features 2. Features (1) Low drain-source on-resistance: RDS(ON) = 3.6 mΩ (typ.) (VGS = 10 V) (2) Low leakage current

7.1. tk65s04n1l.pdf Size:309K _toshiba

TK65S04K3L
TK65S04K3L

TK65S04N1L MOSFETs Silicon N-channel MOS (U-MOS-H) TK65S04N1L TK65S04N1L TK65S04N1L TK65S04N1L 1. Applications 1. Applications 1. Applications 1. Applications • Automotive • Motor Drivers • Switching Voltage Regulators 2. Features 2. Features 2. Features 2. Features (1) Low drain-source on-resistance: RDS(ON) = 3.3 mΩ (typ.) (2) Low leakage current: IDSS = 10 µA (m

 

Datasheet: IRFP360LC , IRFP3710 , IRFP430 , IRFP431 , IRFP432 , IRFP433 , IRFP440 , IRFP440A , J310 , IRFP442 , IRFP443 , IRFP448 , IRFP450 , IRFP450A , IRFP450FI , IRFP450LC , IRFP451 .

 

 
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