All MOSFET. TK65S04K3L Datasheet

 

TK65S04K3L Datasheet and Replacement


   Type Designator: TK65S04K3L
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 88 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 40 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id| ⓘ - Maximum Drain Current: 65 A
   Tj ⓘ - Maximum Junction Temperature: 175 °C
   tr ⓘ - Rise Time: 11 nS
   Cossⓘ - Output Capacitance: 680 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.0045 Ohm
   Package: DPAK
 

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TK65S04K3L Datasheet (PDF)

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TK65S04K3L

TK65S04K3LMOSFETs Silicon N-channel MOS (U-MOS )TK65S04K3LTK65S04K3LTK65S04K3LTK65S04K3L1. Applications1. Applications1. Applications1. Applications Motor Drivers DC-DC Converters Switching Voltage Regulators2. Features2. Features2. Features2. Features(1) Low drain-source on-resistance: RDS(ON) = 3.6 m (typ.) (VGS = 10 V)(2) Low leakage current

 7.1. Size:309K  toshiba
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TK65S04K3L

TK65S04N1LMOSFETs Silicon N-channel MOS (U-MOS-H)TK65S04N1LTK65S04N1LTK65S04N1LTK65S04N1L1. Applications1. Applications1. Applications1. Applications Automotive Motor Drivers Switching Voltage Regulators2. Features2. Features2. Features2. Features(1) Low drain-source on-resistance: RDS(ON) = 3.3 m (typ.)(2) Low leakage current: IDSS = 10 A (m

Datasheet: TK5A65D , TK5P50D , TK5P53D , TK60A08J1 , TK60J25D , TK60P03M1 , TK60S06K3L , TK65L60V , IRF640 , TK6A45DA , TK6A50D , TK6A53D , TK6A55DA , TK6A60D , TK6A65D , TK6P53D , TK70A06J1 .

History: LPM9040A | AP70T03GH | NCE1205 | SM1F12NSKP | HM4444 | IXTQ10P50P | IRFP2907

Keywords - TK65S04K3L MOSFET datasheet

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