TK6A50D Datasheet and Replacement. Cross Reference Search

TK6A50D Datasheet (PDF)

..1. Size:172K toshiba
tk6a50d.pdf pdf_icon

TK6A50D TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (-MOS) TK6A50D Switching Regulator Applications Unit: mm2.7 0.2 10 0.3 3.2 0.2 A Low drain-source ON-resistance: RDS (ON) = 1.2 (typ.) High forward transfer admittance: |Yfs| = 2.5 S (typ.) Low leakage current: IDSS = 10 A (max) (VDS = 500 V) Enhancement mode: Vth

..2. Size:252K inchange semiconductor
tk6a50d.pdf pdf_icon

INCHANGE SemiconductoriscN-Channel MOSFET Transistor TK6A50DITK6A50DFEATURESLow drain-source on-resistance:RDS(ON) = 1.2 (typ.)Enhancement mode:Vth = 2.4 to 4.4V (VDS = 10 V, ID=1.0mA)100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRITIONSwitching Voltage RegulatorsABSOLUTE MAXIMUM RATINGS(T

9.1. Size:183K toshiba
tk6a53d.pdf pdf_icon

TK6A53D TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (-MOS) TK6A53D Switching Regulator Applications Unit: mm2.7 0.210 0.3 3.2 0.2 A Low drain-source ON-resistance: RDS (ON) = 1.1 (typ.) High forward transfer admittance: |Yfs| = 2.5 S (typ.) Low leakage current: IDSS = 10 A (max) (VDS = 525 V) Enhancement mode: Vth =

9.2. Size:187K toshiba
tk6a55da.pdf pdf_icon

TK6A55DA TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (-MOS) TK6A55DA Switching Regulator Applications Unit: mm2.7 0.210 0.3 3.2 0.2 A Low drain-source ON-resistance: RDS (ON) = 1.25 (typ.) High forward transfer admittance: |Yfs| = 3.2 S (typ.) Low leakage current: IDSS = 10 A (max) (VDS = 550 V) Enhancement mode: Vth