TK75A06K3 Specs and Replacement

Type Designator: TK75A06K3

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 35 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 60 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V

|Id| ⓘ - Maximum Drain Current: 75 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 25 nS

Cossⓘ - Output Capacitance: 800 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.0055 Ohm

Package: TO220SIS

TK75A06K3 substitution

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TK75A06K3 datasheet

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TK75A06K3

TK75A06K3 MOSFETs Silicon N-channel MOS (U-MOS ) TK75A06K3 TK75A06K3 TK75A06K3 TK75A06K3 1. Applications 1. Applications 1. Applications 1. Applications Switching Voltage Regulators 2. Features 2. Features 2. Features 2. Features (1) Low drain-source on-resistance RDS(ON) = 4.5 m (typ.) (2) Low leakage current IDSS = 10 A (max) (VDS = 60 V) (3) Enhancement mode V... See More ⇒

Detailed specifications: TK6A60D, TK6A65D, TK6P53D, TK70A06J1, TK70J04J3, TK70J20D, TK70X04K3, TK70X06K3, IRFB4115, TK7A45DA, TK7A50D, TK7A55D, TK7A65D, TK7P50D, TK80A08K3, TK80E06K3A, TK80F08K3

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