TK7A45DA Specs and Replacement

Type Designator: TK7A45DA

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 35 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 450 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V

|Id| ⓘ - Maximum Drain Current: 6.5 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 18 nS

Cossⓘ - Output Capacitance: 60 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 1.2 Ohm

Package: TO220SIS

TK7A45DA substitution

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TK7A45DA datasheet

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TK7A45DA

TK7A45DA TOSHIBA Field Effect Transistor Silicon N Channel MOS Type ( -MOS ) TK7A45DA Switching Regulator Applications Unit mm 2.7 0.2 10 0.3 3.2 0.2 A Low drain-source ON-resistance RDS (ON) = 1.0 (typ.) High forward transfer admittance Yfs = 3.0 S (typ.) Low leakage current IDSS = 10 A (max) (VDS = 450 V) Enhancement-mode ... See More ⇒

Detailed specifications: TK6A65D, TK6P53D, TK70A06J1, TK70J04J3, TK70J20D, TK70X04K3, TK70X06K3, TK75A06K3, 2N7000, TK7A50D, TK7A55D, TK7A65D, TK7P50D, TK80A08K3, TK80E06K3A, TK80F08K3, TK80S04K3L

Keywords - TK7A45DA MOSFET specs

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