TK7A45DA Datasheet and Replacement
Type Designator: TK7A45DA
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pd ⓘ - Maximum Power Dissipation: 35 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 450 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
|Id| ⓘ - Maximum Drain Current: 6.5 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
tr ⓘ - Rise Time: 18 nS
Cossⓘ - Output Capacitance: 60 pF
Rds ⓘ - Maximum Drain-Source On-State Resistance: 1.2 Ohm
Package: TO220SIS
TK7A45DA substitution
TK7A45DA Datasheet (PDF)
tk7a45da.pdf
TK7A45DA TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (-MOS) TK7A45DA Switching Regulator Applications Unit: mm2.7 0.2 10 0.3 3.2 0.2 A Low drain-source ON-resistance: RDS (ON) = 1.0 (typ.) High forward transfer admittance: Yfs = 3.0 S (typ.) Low leakage current: IDSS = 10 A (max) (VDS = 450 V) Enhancement-mode:
Datasheet: TK6A65D , TK6P53D , TK70A06J1 , TK70J04J3 , TK70J20D , TK70X04K3 , TK70X06K3 , TK75A06K3 , 2N7000 , TK7A50D , TK7A55D , TK7A65D , TK7P50D , TK80A08K3 , TK80E06K3A , TK80F08K3 , TK80S04K3L .
History: AP9474GM | INJ0011AC1 | INK0010AM1 | INK0001BC1 | INJ0001AU1 | AP9469GM | VBMB165R07S
Keywords - TK7A45DA MOSFET datasheet
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Can't find your MOSFET? Learn how to find a substitute transistor by analyzing voltage, current and package compatibility
History: AP9474GM | INJ0011AC1 | INK0010AM1 | INK0001BC1 | INJ0001AU1 | AP9469GM | VBMB165R07S
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