TK7P50D MOSFET. Datasheet pdf. Equivalent
Type Designator: TK7P50D
Marking Code: K7P50D
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Maximum Power Dissipation (Pd): 100 W
Maximum Drain-Source Voltage |Vds|: 500 V
Maximum Gate-Source Voltage |Vgs|: 30 V
Maximum Gate-Threshold Voltage |Vgs(th)|: 4.4 V
Maximum Drain Current |Id|: 7 A
Maximum Junction Temperature (Tj): 150 °C
Total Gate Charge (Qg): 12 nC
Rise Time (tr): 18 nS
Drain-Source Capacitance (Cd): 70 pF
Maximum Drain-Source On-State Resistance (Rds): 1.22 Ohm
Package: DPAK
TK7P50D Transistor Equivalent Substitute - MOSFET Cross-Reference Search
TK7P50D Datasheet (PDF)
0.1. tk7p50d.pdf 
Size:206K _toshiba
TK7P50D TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (π-MOSⅦ) TK7P50D Switching Regulator Applications Unit: mm • Low drain-source ON-resistance: RDS (ON) = 1.0 Ω (typ.) 6.6 ± 0.2 5.34 ± 0.13 0.58MAX • High forward transfer admittance: ⎪Yfs⎪ = 2.5 S (typ.) • Low leakage current: IDSS = 10 μA (max) (VDS = 500 V) • Enhancement-mode: Vth = 2.4 to 4
Datasheet: TK70J20D , TK70X04K3 , TK70X06K3 , TK75A06K3 , TK7A45DA , TK7A50D , TK7A55D , TK7A65D , IRF730 , TK80A08K3 , TK80E06K3A , TK80F08K3 , TK80S04K3L , TK80S06K3L , TK80X04K3 , TK8A10K3 , TK8A25DA .
