TK7P50D Specs and Replacement
Type Designator: TK7P50D
Type of Transistor: MOSFET
Type of Control Channel: N-Channel
Absolute Maximum Ratings
Pd ⓘ - Maximum Power Dissipation: 100 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 500 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
|Id| ⓘ - Maximum Drain Current: 7 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
Electrical Characteristics
tr ⓘ - Rise Time: 18 nS
Cossⓘ - Output Capacitance: 70 pF
RDSonⓘ - Maximum Drain-Source On-State Resistance: 1.22 Ohm
Package: DPAK
TK7P50D substitution
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TK7P50D datasheet
tk7p50d.pdf
TK7P50D TOSHIBA Field Effect Transistor Silicon N Channel MOS Type ( -MOS ) TK7P50D Switching Regulator Applications Unit mm Low drain-source ON-resistance RDS (ON) = 1.0 (typ.) 6.6 0.2 5.34 0.13 0.58MAX High forward transfer admittance Yfs = 2.5 S (typ.) Low leakage current IDSS = 10 A (max) (VDS = 500 V) Enhancement-mode Vth = 2.4 to 4... See More ⇒
Detailed specifications: TK70J20D , TK70X04K3 , TK70X06K3 , TK75A06K3 , TK7A45DA , TK7A50D , TK7A55D , TK7A65D , IRFP250N , TK80A08K3 , TK80E06K3A , TK80F08K3 , TK80S04K3L , TK80S06K3L , TK80X04K3 , TK8A10K3 , TK8A25DA .
Keywords - TK7P50D MOSFET specs
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