TK80A08K3 Specs and Replacement
Type Designator: TK80A08K3
Type of Transistor: MOSFET
Type of Control Channel: N-Channel
Absolute Maximum Ratings
Pd ⓘ - Maximum Power Dissipation: 40 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 75 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Id| ⓘ - Maximum Drain Current: 80 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
Electrical Characteristics
tr ⓘ - Rise Time: 30 nS
Cossⓘ - Output Capacitance: 1140 pF
RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.0045 Ohm
Package: TO220SIS
TK80A08K3 substitution
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TK80A08K3 datasheet
tk80a08k3.pdf
TK80A08K3 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (U-MOS ) TK80A08K3 Switching Regulator Applications Unit mm Low drain-source ON-resistance RDS (ON) = 3.6 m (typ.) High forward transfer admittance Yfs = 200 S (typ.) Low leakage current IDSS = 10 A (max) (VDS = 75 V) Enhancement mode Vth = 2.0 to 4.0 V (VDS = 10 V, ID = 1 mA) Ab... See More ⇒
tk80a04k3l.pdf
TK80A04K3L MOSFETs Silicon N-channel MOS (U-MOS ) TK80A04K3L TK80A04K3L TK80A04K3L TK80A04K3L 1. Applications 1. Applications 1. Applications 1. Applications Automotive Switching Voltage Regulators Motor Drivers 2. Features 2. Features 2. Features 2. Features (1) Low drain-source on-resistance RDS(ON) = 1.9 m (typ.) (VGS = 10 V) (2) Low leakage current IDSS ... See More ⇒
tk80a04k3l.pdf
INCHANGE Semiconductor Isc N-Channel MOSFET Transistor TK80A04K3L ITK80A04K3L FEATURES Low drain-source on-resistance RDS(ON) = 2.4m (typ.) (VGS = 10 V) Enhancement mode Vth = 2.0 to 3.0V (VDS = 10 V, ID=1mA) 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRITION Switching Voltage Regulators ABSOLUTE... See More ⇒
Detailed specifications: TK70X04K3, TK70X06K3, TK75A06K3, TK7A45DA, TK7A50D, TK7A55D, TK7A65D, TK7P50D, IRF630, TK80E06K3A, TK80F08K3, TK80S04K3L, TK80S06K3L, TK80X04K3, TK8A10K3, TK8A25DA, TK8A45DA
Keywords - TK80A08K3 MOSFET specs
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