TK80A08K3 Datasheet and Replacement
Type Designator: TK80A08K3
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pd ⓘ - Maximum Power Dissipation: 40 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 75 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Id| ⓘ - Maximum Drain Current: 80 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
tr ⓘ - Rise Time: 30 nS
Cossⓘ - Output Capacitance: 1140 pF
Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.0045 Ohm
Package: TO220SIS
TK80A08K3 substitution
TK80A08K3 Datasheet (PDF)
tk80a08k3.pdf

TK80A08K3 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (U-MOS) TK80A08K3 Switching Regulator Applications Unit: mm Low drain-source ON-resistance: RDS (ON) = 3.6 m (typ.) High forward transfer admittance: |Yfs| = 200 S (typ.) Low leakage current: IDSS = 10 A (max) (VDS = 75 V) Enhancement mode: Vth = 2.0 to 4.0 V (VDS = 10 V, ID = 1 mA) Ab
tk80a04k3l.pdf

TK80A04K3LMOSFETs Silicon N-channel MOS (U-MOS)TK80A04K3LTK80A04K3LTK80A04K3LTK80A04K3L1. Applications1. Applications1. Applications1. Applications Automotive Switching Voltage Regulators Motor Drivers2. Features2. Features2. Features2. Features(1) Low drain-source on-resistance: RDS(ON) = 1.9 m (typ.) (VGS = 10 V)(2) Low leakage current: IDSS
tk80a04k3l.pdf

INCHANGE SemiconductorIsc N-Channel MOSFET Transistor TK80A04K3LITK80A04K3LFEATURESLow drain-source on-resistance:RDS(ON) = 2.4m (typ.) (VGS = 10 V)Enhancement mode:Vth = 2.0 to 3.0V (VDS = 10 V, ID=1mA)100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRITIONSwitching Voltage RegulatorsABSOLUTE
Datasheet: TK70X04K3 , TK70X06K3 , TK75A06K3 , TK7A45DA , TK7A50D , TK7A55D , TK7A65D , TK7P50D , 7N65 , TK80E06K3A , TK80F08K3 , TK80S04K3L , TK80S06K3L , TK80X04K3 , TK8A10K3 , TK8A25DA , TK8A45DA .
History: FQPF14N30 | RJ1G12BGN | FHF15N60A
Keywords - TK80A08K3 MOSFET datasheet
TK80A08K3 cross reference
TK80A08K3 equivalent finder
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TK80A08K3 replacement
History: FQPF14N30 | RJ1G12BGN | FHF15N60A



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