All MOSFET. TK80E06K3A Datasheet

 

TK80E06K3A Datasheet and Replacement


   Type Designator: TK80E06K3A
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 125 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 60 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id| ⓘ - Maximum Drain Current: 80 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   tr ⓘ - Rise Time: 26 nS
   Cossⓘ - Output Capacitance: 800 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.0058 Ohm
   Package: TO220
 

 TK80E06K3A substitution

   - MOSFET ⓘ Cross-Reference Search

 

TK80E06K3A Datasheet (PDF)

 ..1. Size:235K  toshiba
 tk80e06k3a.pdf pdf_icon

TK80E06K3A

TK80E06K3AMOSFETs Silicon N-channel MOS (U-MOS )TK80E06K3ATK80E06K3ATK80E06K3ATK80E06K3A1. Applications1. Applications1. Applications1. Applications Switching Voltage Regulators2. Features2. Features2. Features2. Features(1) Low drain-source on-resistance: RDS(ON) = 4.8 m (typ.)(2) Low leakage current: IDSS = 10 A (max) (VDS = 60 V)(3) Enhancement mo

 8.1. Size:179K  toshiba
 tk80e08k3.pdf pdf_icon

TK80E06K3A

Target SpecificationTK80E08K3 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (U-MOS) TK80E08K3 E-Bike/UPS/Inverter Unit: mm Low drain-source ON resistance : RDS (ON) = 7.5 m (typ.) High forward transfer admittance : |Yfs| = 135 S (typ.) Low leakage current : IDSS = 10 A (max) (VDS = 75 V) Enhancement mode : Vth = 2.0~4.0 V (VDS = 10 V, ID = 1 mA)

Datasheet: TK70X06K3 , TK75A06K3 , TK7A45DA , TK7A50D , TK7A55D , TK7A65D , TK7P50D , TK80A08K3 , K3569 , TK80F08K3 , TK80S04K3L , TK80S06K3L , TK80X04K3 , TK8A10K3 , TK8A25DA , TK8A45DA , TK8A45D .

History: 2SK1939-01 | SI4833DY

Keywords - TK80E06K3A MOSFET datasheet

 TK80E06K3A cross reference
 TK80E06K3A equivalent finder
 TK80E06K3A lookup
 TK80E06K3A substitution
 TK80E06K3A replacement

 

 
Back to Top

 


 
.