TK80S04K3L MOSFET. Datasheet pdf. Equivalent
Type Designator: TK80S04K3L
Marking Code: K80S04K3
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pdⓘ - Maximum Power Dissipation: 100 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 40 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 3 V
|Id|ⓘ - Maximum Drain Current: 80 A
Tjⓘ - Maximum Junction Temperature: 175 °C
Qgⓘ - Total Gate Charge: 87 nC
trⓘ - Rise Time: 13 nS
Cossⓘ - Output Capacitance: 910 pF
Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.0031 Ohm
Package: DPAK
TK80S04K3L Transistor Equivalent Substitute - MOSFET Cross-Reference Search
TK80S04K3L Datasheet (PDF)
tk80s04k3l.pdf
TK80S04K3LMOSFETs Silicon N-channel MOS (U-MOS )TK80S04K3LTK80S04K3LTK80S04K3LTK80S04K3L1. Applications1. Applications1. Applications1. Applications Motor Drivers DC-DC Converters Switching Voltage Regulators2. Features2. Features2. Features2. Features(1) Low drain-source on-resistance: RDS(ON) = 2.4 m (typ.) (VGS = 10 V)(2) Low leakage current
tk80s06k3l.pdf
TK80S06K3LMOSFETs Silicon N-channel MOS (U-MOS )TK80S06K3LTK80S06K3LTK80S06K3LTK80S06K3L1. Applications1. Applications1. Applications1. Applications Motor Drivers DC-DC Converters Switching Voltage Regulators2. Features2. Features2. Features2. Features(1) Low drain-source on-resistance: RDS(ON) = 4.4 m (typ.) (VGS = 10 V)(2) Low leakage current
Datasheet: IRFP344 , IRFP350 , IRFP350A , IRFP350FI , IRFP350LC , IRFP351 , IRFP352 , IRFP353 , 2SK3568 , IRFP360 , IRFP360LC , IRFP3710 , IRFP430 , IRFP431 , IRFP432 , IRFP433 , IRFP440 .
History: TK9J90E
History: TK9J90E
LIST
Last Update
MOSFET: AOUS66923 | AOUS66920 | AOUS66620 | AOUS66616 | AOUS66416 | AOUS66414 | AOTE32136C | AOTE21115C | AOTS32338C | AOTS32334C | AOTS26108 | AOTS21319C | AOTS21313C | AOTS21311C | AOTS21115C | AOTL66918