TK80S06K3L MOSFET PDF: N-Ch, 60V, 80A. Datasheet. Full specification with pinout and replacement list

TK80S06K3L Specs and Replacement

   Type Designator: TK80S06K3L
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel

Absolute Maximum Ratings

   Pd ⓘ - Maximum Power Dissipation: 100 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 60 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id| ⓘ - Maximum Drain Current: 80 A
   Tj ⓘ - Maximum Junction Temperature: 175 °C

Electrical Characteristics

   tr ⓘ - Rise Time: 13 nS
   Cossⓘ - Output Capacitance: 650 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.0055 Ohm
   Package: DPAK

TK80S06K3L substitution

- MOSFET ⓘ Cross-Reference Search

TK80S06K3L datasheet

..1. Size:238K toshiba
tk80s06k3l.pdf pdf_icon

TK80S06K3L MOSFETs Silicon N-channel MOS (U-MOS ) TK80S06K3L TK80S06K3L TK80S06K3L TK80S06K3L 1. Applications 1. Applications 1. Applications 1. Applications Motor Drivers DC-DC Converters Switching Voltage Regulators 2. Features 2. Features 2. Features 2. Features (1) Low drain-source on-resistance RDS(ON) = 4.4 m (typ.) (VGS = 10 V) (2) Low leakage current... See More ⇒

8.1. Size:279K toshiba
tk80s04k3l.pdf pdf_icon

TK80S04K3L MOSFETs Silicon N-channel MOS (U-MOS ) TK80S04K3L TK80S04K3L TK80S04K3L TK80S04K3L 1. Applications 1. Applications 1. Applications 1. Applications Motor Drivers DC-DC Converters Switching Voltage Regulators 2. Features 2. Features 2. Features 2. Features (1) Low drain-source on-resistance RDS(ON) = 2.4 m (typ.) (VGS = 10 V) (2) Low leakage current... See More ⇒

Detailed specifications: TK7A50D , TK7A55D , TK7A65D , TK7P50D , TK80A08K3 , TK80E06K3A , TK80F08K3 , TK80S04K3L , STP75NF75 , TK80X04K3 , TK8A10K3 , TK8A25DA , TK8A45DA , TK8A45D , TK8A50DA , TK8A50D , TK8A55DA .