TK8A10K3 Specs and Replacement

Type Designator: TK8A10K3

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 18 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 100 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V

|Id| ⓘ - Maximum Drain Current: 8 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 15 nS

Cossⓘ - Output Capacitance: 75 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.12 Ohm

Package: TO220SIS

TK8A10K3 substitution

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TK8A10K3 datasheet

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TK8A10K3

TK8A10K3 TOSHIBA Field Effect Transistor Silicon N-Channel MOS Type (U-MOS ) TK8A10K3 Swiching Regulator Applications Low drain-source ON resistance RDS (ON) = 90 m (typ.) Unit mm Low leakage current IDSS = 10 A (max) (VDS = 100 V) Enhancement-model Vth = 2.0 to 4.0 V (VDS = 10 V, ID = 1.0 mA) Absolute Maximum Ratings (Ta = 25 C) Characteristics Symbol ... See More ⇒

Detailed specifications: TK7A65D, TK7P50D, TK80A08K3, TK80E06K3A, TK80F08K3, TK80S04K3L, TK80S06K3L, TK80X04K3, IRF9540N, TK8A25DA, TK8A45DA, TK8A45D, TK8A50DA, TK8A50D, TK8A55DA, TK8A60DA, TK8A65D

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