All MOSFET. TK8A10K3 Datasheet

 

TK8A10K3 Datasheet and Replacement


   Type Designator: TK8A10K3
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 18 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 100 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id| ⓘ - Maximum Drain Current: 8 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   tr ⓘ - Rise Time: 15 nS
   Cossⓘ - Output Capacitance: 75 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.12 Ohm
   Package: TO220SIS
 

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TK8A10K3 Datasheet (PDF)

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TK8A10K3

TK8A10K3 TOSHIBA Field Effect Transistor Silicon N-Channel MOS Type (U-MOS) TK8A10K3 Swiching Regulator Applications Low drain-source ON resistance: RDS (ON) = 90 m (typ.) Unit: mm Low leakage current: IDSS = 10 A (max) (VDS = 100 V) Enhancement-model: Vth = 2.0 to 4.0 V (VDS = 10 V, ID = 1.0 mA) Absolute Maximum Ratings (Ta = 25C) Characteristics Symbol

Datasheet: TK7A65D , TK7P50D , TK80A08K3 , TK80E06K3A , TK80F08K3 , TK80S04K3L , TK80S06K3L , TK80X04K3 , IRF1010E , TK8A25DA , TK8A45DA , TK8A45D , TK8A50DA , TK8A50D , TK8A55DA , TK8A60DA , TK8A65D .

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