All MOSFET. TK8A45D Datasheet

 

TK8A45D Datasheet and Replacement


   Type Designator: TK8A45D
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pdⓘ - Maximum Power Dissipation: 35 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 450 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
   |Id|ⓘ - Maximum Drain Current: 8 A
   Tjⓘ - Maximum Junction Temperature: 150 °C
   trⓘ - Rise Time: 20 nS
   Cossⓘ - Output Capacitance: 80 pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.9 Ohm
   Package: TO220SIS
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TK8A45D Datasheet (PDF)

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TK8A45D

TK8A45DMOSFETs Silicon N-Channel MOS (-MOS)TK8A45DTK8A45DTK8A45DTK8A45D1. Applications1. Applications1. Applications1. Applications Switching Voltage Regulators2. Features2. Features2. Features2. Features(1) Low drain-source on-resistance: RDS(ON) = 0.73 (typ.)(2) High forward transfer admittance: |Yfs| = 3.8 S (typ.)(3) Low leakage current: IDSS =

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History: FDMS9620S | IRFI7536G | WMM11N80M3 | IXTH4N150

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