All MOSFET. TK8A55DA Datasheet

 

TK8A55DA MOSFET. Datasheet pdf. Equivalent


   Type Designator: TK8A55DA
   Marking Code: K8A55DA
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pdⓘ - Maximum Power Dissipation: 40 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 550 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
   |Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 4 V
   |Id|ⓘ - Maximum Drain Current: 7.5 A
   Tjⓘ - Maximum Junction Temperature: 150 °C
   Qgⓘ - Total Gate Charge: 16 nC
   trⓘ - Rise Time: 20 nS
   Cossⓘ - Output Capacitance: 100 pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 1.07 Ohm
   Package: TO220SIS

 TK8A55DA Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

TK8A55DA Datasheet (PDF)

 ..1. Size:201K  toshiba
 tk8a55da.pdf

TK8A55DA TK8A55DA

TK8A55DA TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (-MOS) TK8A55DA Switching Regulator Applications Unit: mm2.7 0.210 0.3 3.2 0.2 A Low drain-source ON-resistance: RDS (ON) = 0.9 (typ.) High forward transfer admittance: |Yfs| = 3.0 S (typ.) Low leakage current: IDSS = 10 A (max) (VDS = 550 V) Enhancement mode: Vth =

 ..2. Size:258K  inchange semiconductor
 tk8a55da.pdf

TK8A55DA TK8A55DA

INCHANGE SemiconductoriscN-Channel MOSFET Transistor TK8A55DAITK8A55DAFEATURESLow drain-source on-resistance:RDS(ON) = 0.9 (typ.)Enhancement mode:Vth = 2.0 to 4.0V (VDS = 10 V, ID=1.0mA)100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRITIONSwitching Voltage RegulatorsABSOLUTE MAXIMUM RATING

 9.1. Size:209K  toshiba
 tk8a50da.pdf

TK8A55DA TK8A55DA

TK8A50DA TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (-MOS) TK8A50DA Switching Regulator Applications Unit: mm 2.7 0.2 10 0.3 3.2 0.2 A Low drain-source ON-resistance: RDS (ON) = 0.76 (typ.) High forward transfer admittance: Yfs = 4.1 S (typ.) Low leakage current: IDSS = 10 A (max) (VDS = 500 V) Enhancement-mode:

 9.2. Size:180K  toshiba
 tk8a50d.pdf

TK8A55DA TK8A55DA

TK8A50D TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (-MOS) TK8A50D Switching Regulator Applications Unit: mm Low drain-source ON-resistance: RDS (ON) = 0.7 (typ.) High forward transfer admittance: |Yfs| = 4.0 S (typ.) Low leakage current: IDSS = 10 A (max) (VDS = 500 V) Enhancement mode: Vth = 2.0 to 4.0 V (VDS = 10 V, ID = 1 mA) Absolu

 9.3. Size:253K  inchange semiconductor
 tk8a50d.pdf

TK8A55DA TK8A55DA

INCHANGE SemiconductoriscN-Channel MOSFET Transistor TK8A50DITK8A50DFEATURESLow drain-source on-resistance:RDS(ON) = 0.7 (typ.)Enhancement mode:Vth = 2.0 to 4.0V (VDS = 10 V, ID=1.0mA)100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRITIONSwitching Voltage RegulatorsABSOLUTE MAXIMUM RATINGS(T

Datasheet: WPB4002 , FDM15-06KC5 , FQD2N60CTM , FDM47-06KC5 , FDPF045N10A , FMD15-06KC5 , FDMS8672S , FMD21-05QC , IRLB4132 , FDMS86368F085 , FMD47-06KC5 , FDBL86361F085 , FMK75-01F , FMM110-015X2F , FMM150-0075X2F , FMM22-05PF , FMM22-06PF .

History: BRD20N03 | AP95T07BGP | NCE65TF099 | WMJ90N60F2 | GSM4922W | STB22NS25ZT4

 

 
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