All MOSFET. TK8A55DA Datasheet

 

TK8A55DA MOSFET. Datasheet pdf. Equivalent

Type Designator: TK8A55DA

Type of Transistor: MOSFET

Type of Control Channel: N -Channel

Maximum Power Dissipation (Pd): 40 W

Maximum Drain-Source Voltage |Vds|: 550 V

Maximum Gate-Source Voltage |Vgs|: 30 V

Maximum Gate-Threshold Voltage |Vgs(th)|: 4 V

Maximum Drain Current |Id|: 7.5 A

Maximum Junction Temperature (Tj): 150 °C

Maximum Drain-Source On-State Resistance (Rds): 1.07 Ohm

Package: TO220SIS

TK8A55DA Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

TK8A55DA Datasheet (PDF)

0.1. tk8a55da.pdf Size:201K _toshiba

TK8A55DA
TK8A55DA

TK8A55DA TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (π-MOSⅦ) TK8A55DA Switching Regulator Applications Unit: mm 2.7 ± 0.2 10 ± 0.3 Ф3.2 ± 0.2 A • Low drain-source ON-resistance: RDS (ON) = 0.9 Ω(typ.) • High forward transfer admittance: |Yfs| = 3.0 S (typ.) • Low leakage current: IDSS = 10 μA (max) (VDS = 550 V) • Enhancement mode: Vth =

0.2. tk8a55da.pdf Size:258K _inchange_semiconductor

TK8A55DA
TK8A55DA

INCHANGE Semiconductor iscN-Channel MOSFET Transistor TK8A55DA, ITK8A55DA ·FEATURES ·Low drain-source on-resistance: RDS(ON) = 0.9Ω (typ.) ·Enhancement mode: Vth = 2.0 to 4.0V (VDS = 10 V, ID=1.0mA) ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation ·DESCRITION ·Switching Voltage Regulators ·ABSOLUTE MAXIMUM RATING

 9.1. tk8a50da.pdf Size:209K _toshiba

TK8A55DA
TK8A55DA

TK8A50DA TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (π-MOSⅦ) TK8A50DA Switching Regulator Applications Unit: mm 2.7 ± 0.2 10 ± 0.3 Ф3.2 ± 0.2 A • Low drain-source ON-resistance: RDS (ON) = 0.76 Ω (typ.) • High forward transfer admittance: ⎪Yfs⎪ = 4.1 S (typ.) • Low leakage current: IDSS = 10 μA (max) (VDS = 500 V) • Enhancement-mode:

9.2. tk8a50d.pdf Size:180K _toshiba

TK8A55DA
TK8A55DA

TK8A50D TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (π-MOSⅦ) TK8A50D Switching Regulator Applications Unit: mm • Low drain-source ON-resistance: RDS (ON) = 0.7 Ω (typ.) • High forward transfer admittance: |Yfs| = 4.0 S (typ.) • Low leakage current: IDSS = 10 μA (max) (VDS = 500 V) • Enhancement mode: Vth = 2.0 to 4.0 V (VDS = 10 V, ID = 1 mA) Absolu

 9.3. tk8a50d.pdf Size:253K _inchange_semiconductor

TK8A55DA
TK8A55DA

INCHANGE Semiconductor iscN-Channel MOSFET Transistor TK8A50D,ITK8A50D ·FEATURES ·Low drain-source on-resistance: RDS(ON) = 0.7Ω (typ.) ·Enhancement mode: Vth = 2.0 to 4.0V (VDS = 10 V, ID=1.0mA) ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation ·DESCRITION ·Switching Voltage Regulators ·ABSOLUTE MAXIMUM RATINGS(T

Datasheet: IRFP350LC , IRFP351 , IRFP352 , IRFP353 , IRFP354 , IRFP360 , IRFP360LC , IRFP3710 , J111 , IRFP431 , IRFP432 , IRFP433 , IRFP440 , IRFP440A , IRFP441 , IRFP442 , IRFP443 .

 

 
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