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TK8A55DA Spec and Replacement


   Type Designator: TK8A55DA
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 40 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 550 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
   |Id| ⓘ - Maximum Drain Current: 7.5 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   tr ⓘ - Rise Time: 20 nS
   Cossⓘ - Output Capacitance: 100 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 1.07 Ohm
   Package: TO220SIS

 TK8A55DA Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

TK8A55DA Specs

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TK8A55DA

TK8A55DA TOSHIBA Field Effect Transistor Silicon N Channel MOS Type ( -MOS ) TK8A55DA Switching Regulator Applications Unit mm 2.7 0.2 10 0.3 3.2 0.2 A Low drain-source ON-resistance RDS (ON) = 0.9 (typ.) High forward transfer admittance Yfs = 3.0 S (typ.) Low leakage current IDSS = 10 A (max) (VDS = 550 V) Enhancement mode Vth = ... See More ⇒

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TK8A55DA

INCHANGE Semiconductor iscN-Channel MOSFET Transistor TK8A55DA ITK8A55DA FEATURES Low drain-source on-resistance RDS(ON) = 0.9 (typ.) Enhancement mode Vth = 2.0 to 4.0V (VDS = 10 V, ID=1.0mA) 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRITION Switching Voltage Regulators ABSOLUTE MAXIMUM RATING... See More ⇒

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TK8A55DA

TK8A50DA TOSHIBA Field Effect Transistor Silicon N Channel MOS Type ( -MOS ) TK8A50DA Switching Regulator Applications Unit mm 2.7 0.2 10 0.3 3.2 0.2 A Low drain-source ON-resistance RDS (ON) = 0.76 (typ.) High forward transfer admittance Yfs = 4.1 S (typ.) Low leakage current IDSS = 10 A (max) (VDS = 500 V) Enhancement-mode ... See More ⇒

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TK8A55DA

TK8A50D TOSHIBA Field Effect Transistor Silicon N Channel MOS Type ( -MOS ) TK8A50D Switching Regulator Applications Unit mm Low drain-source ON-resistance RDS (ON) = 0.7 (typ.) High forward transfer admittance Yfs = 4.0 S (typ.) Low leakage current IDSS = 10 A (max) (VDS = 500 V) Enhancement mode Vth = 2.0 to 4.0 V (VDS = 10 V, ID = 1 mA) Absolu... See More ⇒

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Detailed specifications: TK80S06K3L , TK80X04K3 , TK8A10K3 , TK8A25DA , TK8A45DA , TK8A45D , TK8A50DA , TK8A50D , 4435 , TK8A60DA , TK8A65D , TK8P25DA , TK8S06K3L , TK9A45D , TK9A55DA , TK9A60D , TPC6008-H .

History: IPP60R190P6 | AP02N90JB

Keywords - TK8A55DA MOSFET specs

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