All MOSFET. TK8S06K3L Datasheet

 

TK8S06K3L Datasheet and Replacement


   Type Designator: TK8S06K3L
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 25 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 60 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id| ⓘ - Maximum Drain Current: 8 A
   Tj ⓘ - Maximum Junction Temperature: 175 °C
   tr ⓘ - Rise Time: 7 nS
   Cossⓘ - Output Capacitance: 80 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.054 Ohm
   Package: DPAK
 

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TK8S06K3L Datasheet (PDF)

 ..1. Size:238K  toshiba
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TK8S06K3L

TK8S06K3LMOSFETs Silicon N-channel MOS (U-MOS )TK8S06K3LTK8S06K3LTK8S06K3LTK8S06K3L1. Applications1. Applications1. Applications1. Applications Motor Drivers DC-DC Converters Switching Voltage Regulators2. Features2. Features2. Features2. Features(1) Low drain-source on-resistance: RDS(ON) = 43 m (typ.) (VGS = 10 V)(2) Low leakage current: IDSS

 ..2. Size:847K  cn vbsemi
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TK8S06K3L

TK8S06K3Lwww.VBsemi.twN-Channel 60 V (D-S) MOSFETFEATURESPRODUCT SUMMARY TrenchFET Power MOSFETVDS (V) RDS(on) () Max. ID (A) Qg (Typ.) 100 % Rg and UIS Tested0.073 at VGS = 10 V 18.2 Material categorization:60 19.8For definitions of compliance please see0.085 at VGS = 4.5 V 13.2TO-252APPLICATIONSD DC/DC Converters DC/AC Inverters

Datasheet: TK8A45DA , TK8A45D , TK8A50DA , TK8A50D , TK8A55DA , TK8A60DA , TK8A65D , TK8P25DA , AO4407 , TK9A45D , TK9A55DA , TK9A60D , TPC6008-H , TPC6009-H , TPC6010-H , TPC6011 , TPC6012 .

Keywords - TK8S06K3L MOSFET datasheet

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