All MOSFET. TK8S06K3L Datasheet

 

TK8S06K3L Datasheet and Replacement


   Type Designator: TK8S06K3L
   Marking Code: K8S06K3
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 25 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 60 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 3 V
   |Id| ⓘ - Maximum Drain Current: 8 A
   Tj ⓘ - Maximum Junction Temperature: 175 °C
   Qg ⓘ - Total Gate Charge: 10 nC
   tr ⓘ - Rise Time: 7 nS
   Cossⓘ - Output Capacitance: 80 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.054 Ohm
   Package: DPAK
 

 TK8S06K3L substitution

   - MOSFET ⓘ Cross-Reference Search

 

TK8S06K3L Datasheet (PDF)

 ..1. Size:238K  toshiba
tk8s06k3l.pdf pdf_icon

TK8S06K3L

TK8S06K3LMOSFETs Silicon N-channel MOS (U-MOS )TK8S06K3LTK8S06K3LTK8S06K3LTK8S06K3L1. Applications1. Applications1. Applications1. Applications Motor Drivers DC-DC Converters Switching Voltage Regulators2. Features2. Features2. Features2. Features(1) Low drain-source on-resistance: RDS(ON) = 43 m (typ.) (VGS = 10 V)(2) Low leakage current: IDSS

 ..2. Size:847K  cn vbsemi
tk8s06k3l.pdf pdf_icon

TK8S06K3L

TK8S06K3Lwww.VBsemi.twN-Channel 60 V (D-S) MOSFETFEATURESPRODUCT SUMMARY TrenchFET Power MOSFETVDS (V) RDS(on) () Max. ID (A) Qg (Typ.) 100 % Rg and UIS Tested0.073 at VGS = 10 V 18.2 Material categorization:60 19.8For definitions of compliance please see0.085 at VGS = 4.5 V 13.2TO-252APPLICATIONSD DC/DC Converters DC/AC Inverters

Datasheet: IRFP360LC , IRFP3710 , IRFP430 , IRFP431 , IRFP432 , IRFP433 , IRFP440 , IRFP440A , IRFP250 , IRFP442 , IRFP443 , IRFP448 , IRFP450 , IRFP450A , IRFP450FI , IRFP450LC , IRFP451 .

Keywords - TK8S06K3L MOSFET datasheet

 TK8S06K3L cross reference
 TK8S06K3L equivalent finder
 TK8S06K3L lookup
 TK8S06K3L substitution
 TK8S06K3L replacement

 

 
Back to Top

 


 
.