TK8S06K3L PDF and Equivalents Search

 

TK8S06K3L Specs and Replacement

Type Designator: TK8S06K3L

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 25 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 60 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V

|Id| ⓘ - Maximum Drain Current: 8 A

Tj ⓘ - Maximum Junction Temperature: 175 °C

Electrical Characteristics

tr ⓘ - Rise Time: 7 nS

Cossⓘ - Output Capacitance: 80 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.054 Ohm

Package: DPAK

TK8S06K3L substitution

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TK8S06K3L datasheet

 ..1. Size:238K  toshiba
 tk8s06k3l.pdf pdf_icon

TK8S06K3L

TK8S06K3L MOSFETs Silicon N-channel MOS (U-MOS ) TK8S06K3L TK8S06K3L TK8S06K3L TK8S06K3L 1. Applications 1. Applications 1. Applications 1. Applications Motor Drivers DC-DC Converters Switching Voltage Regulators 2. Features 2. Features 2. Features 2. Features (1) Low drain-source on-resistance RDS(ON) = 43 m (typ.) (VGS = 10 V) (2) Low leakage current IDSS... See More ⇒

 ..2. Size:847K  cn vbsemi
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TK8S06K3L

TK8S06K3L www.VBsemi.tw N-Channel 60 V (D-S) MOSFET FEATURES PRODUCT SUMMARY TrenchFET Power MOSFET VDS (V) RDS(on) ( ) Max. ID (A) Qg (Typ.) 100 % Rg and UIS Tested 0.073 at VGS = 10 V 18.2 Material categorization 60 19.8 For definitions of compliance please see 0.085 at VGS = 4.5 V 13.2 TO-252 APPLICATIONS D DC/DC Converters DC/AC Inverters ... See More ⇒

Detailed specifications: TK8A45DA , TK8A45D , TK8A50DA , TK8A50D , TK8A55DA , TK8A60DA , TK8A65D , TK8P25DA , 13N50 , TK9A45D , TK9A55DA , TK9A60D , TPC6008-H , TPC6009-H , TPC6010-H , TPC6011 , TPC6012 .

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