TK8S06K3L Datasheet. Specs and Replacement

Type Designator: TK8S06K3L  📄📄 

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 25 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 60 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V

|Id| ⓘ - Maximum Drain Current: 8 A

Tj ⓘ - Maximum Junction Temperature: 175 °C

Electrical Characteristics

tr ⓘ - Rise Time: 7 nS

Cossⓘ - Output Capacitance: 80 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.054 Ohm

Package: DPAK

TK8S06K3L substitution

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TK8S06K3L datasheet

 ..1. Size:238K  toshiba
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TK8S06K3L

TK8S06K3L MOSFETs Silicon N-channel MOS (U-MOS ) TK8S06K3L TK8S06K3L TK8S06K3L TK8S06K3L 1. Applications 1. Applications 1. Applications 1. Applications Motor Drivers DC-DC Converters Switching Voltage Regulators 2. Features 2. Features 2. Features 2. Features (1) Low drain-source on-resistance RDS(ON) = 43 m (typ.) (VGS = 10 V) (2) Low leakage current IDSS... See More ⇒

 ..2. Size:847K  cn vbsemi
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TK8S06K3L

TK8S06K3L www.VBsemi.tw N-Channel 60 V (D-S) MOSFET FEATURES PRODUCT SUMMARY TrenchFET Power MOSFET VDS (V) RDS(on) ( ) Max. ID (A) Qg (Typ.) 100 % Rg and UIS Tested 0.073 at VGS = 10 V 18.2 Material categorization 60 19.8 For definitions of compliance please see 0.085 at VGS = 4.5 V 13.2 TO-252 APPLICATIONS D DC/DC Converters DC/AC Inverters ... See More ⇒

Detailed specifications: TK8A45DA, TK8A45D, TK8A50DA, TK8A50D, TK8A55DA, TK8A60DA, TK8A65D, TK8P25DA, 13N50, TK9A45D, TK9A55DA, TK9A60D, TPC6008-H, TPC6009-H, TPC6010-H, TPC6011, TPC6012

Keywords - TK8S06K3L MOSFET specs

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