TK9A45D Datasheet and Replacement
Type Designator: TK9A45D
Marking Code: K9A45D
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pd ⓘ - Maximum Power Dissipation: 40 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 450 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
|Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 4 V
|Id| ⓘ - Maximum Drain Current: 9 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
Qg ⓘ - Total Gate Charge: 16 nC
tr ⓘ - Rise Time: 20 nS
Cossⓘ - Output Capacitance: 100 pF
Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.77 Ohm
Package: TO220SIS
TK9A45D substitution
TK9A45D Datasheet (PDF)
tk9a45d.pdf

TK9A45D TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (-MOS) TK9A45D Switching Regulator Applications Unit: mm2.7 0.2 10 0.3 3.2 0.2 A Low drain-source ON-resistance: RDS (ON) = 0.63 (typ.) High forward transfer admittance: Yfs = 4.8 S (typ.) Low leakage current: IDSS = 10 A (max) (VDS = 450 V) Enhancement-mode: V
Datasheet: FMP36-015P , FMP76-01T , GMM3x100-01X1-SMD , FDMS0306AS , GMM3x120-0075X2-SMD , FDMS0300S , GMM3x160-0055X2-SMD , FDMC7200S , CS150N03A8 , FDMC7200 , GMM3x60-015X2-SMD , FDMC0310AS , GWM100-0085X1-SL , FDMS3610S , GWM100-0085X1-SMD , FDMS3606S , GWM100-01X1-SL .
History: TK8A10K3
Keywords - TK9A45D MOSFET datasheet
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History: TK8A10K3



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